A44 datasheet, PDF - EEWORLD Datasheet

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A44: DescriptionRated power: 500mW Collector current Ic: 200mA Collector-emitter breakdown voltage Vce: 400V Transistor type: NPN NPN, Vceo=400V, Ic=200mA, hfe=100~200; CategoryDiscrete semiconductor The transistor; File Size2MB，4 Pages; ManufacturerJCET; Websitehttp://www.cj-elec.com/; Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

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A44 Overview

Rated power: 500mW Collector current Ic: 200mA Collector-emitter breakdown voltage Vce: 400V Transistor type: NPN NPN, Vceo=400V, Ic=200mA, hfe=100~200

A44 Parametric

Parameter Name	Attribute value
Maker	JCET
package instruction	,
Reach Compliance Code	unknown
Maximum collector current (IC)	0.2 A
Configuration	Single
Minimum DC current gain (hFE)	60
Number of components	1
Maximum operating temperature	150 °C
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.625 W
surface mount	NO
Nominal transition frequency (fT)	50 MHz

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-89-3L Plastic-Encapsulate Transistors

SOT-89-3L

A44

TRANSISTOR (NPN)

1. BASE

2. COLLECTOR

3. EMITTER

FEATURES

Low Collector-Emitter Saturation Voltage

High Breakdown Voltage

MARKING: A44

MAXIMUM RATINGS (T

=25℃ unless otherwise noted)

Symbol

CBO

CEO

EBO

θJA

stg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

-Continuous

Collector Current

-Pulsed

Collector Power Dissipation

Thermal Resistance

from

Junction

Ambient

Junction Temperature

Storage Temperature

Value

400

200

300

500

250

150

-55~+150

Unit

℃/W

℃

ELECTRICAL CHARACTERISTICS (T

=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

Symbol

(BR)CBO

(BR)CEO

CBO

EBO

FE(1)

DC current gain

FE(2)

FE(3)

FE(4)

Collector-emitter saturation voltage

Base-emitter saturation voltage

Collector output capacitance

Emitter input capacitance

CE(sat)

BE(sat)

T est conditions

=100µA,I

=1mA,I

=10µA,I

=400V,I

=4V,I

=10V, I

=1mA

=10V, I

=10mA

=10V, I

=50mA

=10V, I

=100mA

=1mA,I

=0.1mA

=10mA,I

=1mA

=50mA,I

=5mA

=10mA,I

=1mA

=20V, I

=0, f=1MHz

=0.5V, I

=0, f=1MHz

Min

400

Typ

Max

Unit

(BR)EBO

0.1

0.4

0.5

0.75

130

200

µA

*Pulse test: pulse width

≤300μs,

duty cycle≤ 2.0%.

www.cj-elec.com

E,Nov

,2015

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