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8680A

Description
Drain-source voltage (Vdss): 80V Continuous drain current (Id) (at 25°C): 92A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 7.8mΩ @ 40A, 10V Maximum power consumption Dispersion (Ta=25°C): 139W (Tc) Type: N channel N channel, 80V, 92A, 6.6mΩ@10V
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size1MB,5 Pages
ManufacturerGoford Semiconductor
Websitehttp://www.goford.cn/
Shenzhen Gufeng Electronics Co., Ltd. GOFORD SEMICONDUCTOR was established in Hong Kong in 1995. Now it has established branches, offices and agency networks all over the world. National high-tech enterprises. GOFORD focuses on the research and development, production and sales of semiconductor power components MOSFET field effect tubes. The company provides high-reliability products through strict quality management system and assessment; continuous technological research and development innovation to meet the needs of market segments and product cost-effectiveness; with a global layout vision, it continues to promote the popularity of the GOFORD brand in the field of power devices. GOFORD is committed to creating a world-renowned power device brand!
Download Datasheet Parametric View All

8680A Overview

Drain-source voltage (Vdss): 80V Continuous drain current (Id) (at 25°C): 92A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 7.8mΩ @ 40A, 10V Maximum power consumption Dispersion (Ta=25°C): 139W (Tc) Type: N channel N channel, 80V, 92A, 6.6mΩ@10V

8680A Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)80V
Continuous drain current (Id) at 25°C92A(Tc)
Gate-source threshold voltage4V @ 250uA
Drain-source on-resistance7.8mΩ @ 40A,10V
Maximum power dissipation (Ta=25°C)139W(Tc)
typeN channel

8680A Preview

Download Datasheet
GOFORD
8680A
General Description
The 8680A is N-channel MOS Field Effect Transistor
designed for high current switching applications. Rugged
E
AS
capability and ultra low R
DS(ON)
is suitable for PWM,
load switching especially for E-Bike controller applications.
Schematic Diagram
Features
VDSS
80V
RDS(ON)
@10V (typ)
6.6
ID
92A
Marking and pin assignment
Special Designed for E-Bike Controller Application
Ultra Low On-Resistance
High UIS and UIS 100% Test
Application
64V E-Bike Controller Applications
Hard Switched and High Frequency Circuits
Uninterruptible Power Supply
To-220 Top View
Package Marking and Ordering Information
Device Marking
8680A
Device
8680A
Device Package
TO-220
Reel Size
-
Tape width
-
Quantity
-
Table 1. Absolute Maximum Ratings (TA=25℃)
Symbol
Parameter
V
DS
V
GS
I
D (DC)
I
D (DC)
I
DM (pluse)
dv/dt
Drain-Source Voltage (
V
GS=
0V)
Gate-Source Voltage (
V
DS=
0V)
Drain Current (DC) at Tc=25℃
Drain Current (DC) at Tc=100℃
Drain Current-Continuous@ Current-Pulsed
(Note 1)
Value
80
±25
92
64.4
368
30
139
0.93
Unit
V
V
A
A
A
Peak Diode Recovery Voltage
Maximum Power Dissipation(Tc=25℃)
Derating Factor
V/ns
W
W/℃
P
D
E
AS
Single Pulse Avalanche Energy
(Note 2)
625
-55 To 175
mJ
Operating Junction and Storage Temperature Range
T
J
,T
STG
Notes 1.
Repetitive Rating: Pulse width limited by maximum junction temperature
2.
E
AS
condition:T
J
=25℃
,
V
DD
=40V,V
G
=10V,R
G
=25Ω
B
B
HTTP://www.gofordsemi.com
TEL:0755-29961262
FAX:0755-29961466
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