630A-252 datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> MOS (field effect tube)> 630A-252

630A-252: DescriptionDrain-source voltage (Vdss): 200V Continuous drain current (Id) (at 25°C): 9A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 250mΩ @ 4.5A, 10V Maximum power consumption Dispersed (Ta=25°C): 83W (Tc) Type: N channel N channel, 200V, 9A, 0.21Ω@10V; CategoryDiscrete semiconductor MOS (field effect tube); File Size2MB，6 Pages; ManufacturerGoford Semiconductor; Websitehttp://www.goford.cn/; Shenzhen Gufeng Electronics Co., Ltd. GOFORD SEMICONDUCTOR was established in Hong Kong in 1995. Now it has established branches, offices and agency networks all over the world. National high-tech enterprises. GOFORD focuses on the research and development, production and sales of semiconductor power components MOSFET field effect tubes. The company provides high-reliability products through strict quality management system and assessment; continuous technological research and development innovation to meet the needs of market segments and product cost-effectiveness; with a global layout vision, it continues to promote the popularity of the GOFORD brand in the field of power devices. GOFORD is committed to creating a world-renowned power device brand!

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630A-252 Overview

Drain-source voltage (Vdss): 200V Continuous drain current (Id) (at 25°C): 9A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 250mΩ @ 4.5A, 10V Maximum power consumption Dispersed (Ta=25°C): 83W (Tc) Type: N channel N channel, 200V, 9A, 0.21Ω@10V

630A-252 Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	200V
Continuous drain current (Id) at 25°C	9A(Tc)
Gate-source threshold voltage	4V @ 250uA
Drain-source on-resistance	250mΩ @ 4.5A,10V
Maximum power dissipation (Ta=25°C)	83W(Tc)
type	N channel

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