5N60 datasheet, PDF - EEWORLD Datasheet

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5N60: DescriptionMOSFET; CategoryDiscrete semiconductor; File Size1MB，9 Pages; ManufacturerGoford Semiconductor; Websitehttp://www.goford.cn/; Shenzhen Gufeng Electronics Co., Ltd. GOFORD SEMICONDUCTOR was established in Hong Kong in 1995. Now it has established branches, offices and agency networks all over the world. National high-tech enterprises. GOFORD focuses on the research and development, production and sales of semiconductor power components MOSFET field effect tubes. The company provides high-reliability products through strict quality management system and assessment; continuous technological research and development innovation to meet the needs of market segments and product cost-effectiveness; with a global layout vision, it continues to promote the popularity of the GOFORD brand in the field of power devices. GOFORD is committed to creating a world-renowned power device brand!

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5N60 Overview

MOSFET

Features

Product Name: MOSFET

Product model: 5N60

Product Description:

This Power MOSFET is produced using

advanced planar stripe DMOS technology.

This latest technology has been especially

designed to minimize on-state resistance,

Have a high rugged avalanche

characteristics.These devices are well suited

for high efficiency switched mode power

supplies, active power factor

correction.electronic lamp ballasts based on

half bridge topology.

parameter:

Drain-Source Voltage VDS 600 V

Drain Current-Continuous ID 4.5A

Drain Current -Pulsed (Note 1) IDM 18A

Maximum Power Dissipation PD 120W

VGS Gate-to-Source Voltage ± 30 V

EAS Single PulseAvalanche Energy 280 mJ

Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns

Package: TO-220

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5N60/5N60F

600V N-Channel MOSFET

GENERAL DESCRIPTION

This Power MOSFET is produced using

advanced planar stripe, DMOS

DSS

600V

DS(ON)

2.5

4.5A

technology.This latest technology has been

especially designed to minimize on-state

resistance, have a high rugged avalanche

characteristics,

such

fast

switching

time,low on resistance.low gate charge and

especially excellent avalanche characteristics.

This power MOSFET is usually used at AC

adaptors, on the battery charger and SMPS

Features

• 4.5A, 600V, RDS(on) = 2.5Ω @VGS = 10 V

• Low gate charge ( typical 17nC)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

5N60/5N60F

TO-220/220F

0GFD

PART NUMBER

PACKAGE

BRAND

Ordering Information

www.goford.cn

TEL：0755-86350980 FAX：0755-86350963

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