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5N20A-252

Description
Drain-source voltage (Vdss): 200V Continuous drain current (Id) (at 25°C): 5A (Tc) Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 580mΩ @ 2.5A, 10V Maximum power consumption Dispersed (Ta=25°C): 78W (Tc) Type: N channel N channel, 200V, 5A, 0.49Ω@10V
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size2MB,6 Pages
ManufacturerGoford Semiconductor
Websitehttp://www.goford.cn/
Shenzhen Gufeng Electronics Co., Ltd. GOFORD SEMICONDUCTOR was established in Hong Kong in 1995. Now it has established branches, offices and agency networks all over the world. National high-tech enterprises. GOFORD focuses on the research and development, production and sales of semiconductor power components MOSFET field effect tubes. The company provides high-reliability products through strict quality management system and assessment; continuous technological research and development innovation to meet the needs of market segments and product cost-effectiveness; with a global layout vision, it continues to promote the popularity of the GOFORD brand in the field of power devices. GOFORD is committed to creating a world-renowned power device brand!
Download Datasheet Parametric View All

5N20A-252 Overview

Drain-source voltage (Vdss): 200V Continuous drain current (Id) (at 25°C): 5A (Tc) Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 580mΩ @ 2.5A, 10V Maximum power consumption Dispersed (Ta=25°C): 78W (Tc) Type: N channel N channel, 200V, 5A, 0.49Ω@10V

5N20A-252 Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)200V
Continuous drain current (Id) at 25°C5A(Tc)
Gate-source threshold voltage3V @ 250uA
Drain-source on-resistance580mΩ @ 2.5A,10V
Maximum power dissipation (Ta=25°C)78W(Tc)
typeN channel

5N20A-252 Preview

Download Datasheet
GOFORD
Description
Features
V
DSS
200V
5N20A
@ 10V (Typ)
R
DS(ON)
0.49
I
D
5A
Fast switching
100% avalanche tested
Improved dv/dt capability
TO-252
TO-251
Application
DC Motor Control and Class D Amplifier
Uninterruptible Power Supply (UPS)
Automotive
Absolute Maximum Ratings
T
C
=25℃
Symbol
V
DSS
V
GSS
I
D
I
DM
E
AS
dv/dt
P
D
R
θJC
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
note1
Single Pulsed Avalanche Energy
note2
Peak Diode Recovery Energy
note3
Power Dissipation
Linear Derating Factor
Thermal Resistance, Junction to Case
unless otherwise specified
Max.
TO-251/TO-252
200
± 30
T
C
= 25℃
T
C
= 100℃
5
3.24
20
125
5
T
C
= 25℃
T
C
> 25℃
78
0.625
1.6
-55 to +150
Parameter
Units
V
V
A
A
A
mJ
V/ns
W
W/℃
℃/W
Operating and Storage Temperature Range
*Drain current limited by maximum junction temperature
HTTP://www.gofordsemi.com
TEL:0755-29961262
FAX:0755-29961466
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