3KP150_R2_00001 datasheet, PDF

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3KP150_R2_00001: DescriptionTrans Voltage Suppressor Diode, 3000W, 150V V(RWM), Unidirectional, 1 Element, Silicon,; CategoryDiscrete semiconductor diode; File Size104KB，6 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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Trans Voltage Suppressor Diode, 3000W, 150V V(RWM), Unidirectional, 1 Element, Silicon,

3KP150_R2_00001 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	PANJIT
package instruction	O-PALF-W2
Reach Compliance Code	not_compliant
ECCN code	EAR99
Other features	EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE, UL RECOGNIZED
Maximum breakdown voltage	211.5 V
Minimum breakdown voltage	167 V
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code	O-PALF-W2
Maximum non-repetitive peak reverse power dissipation	3000 W
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
polarity	UNIDIRECTIONAL
Maximum repetitive peak reverse voltage	150 V
surface mount	NO
technology	AVALANCHE
Terminal form	WIRE
Terminal location	AXIAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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3KP SERIES

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR PEAK PULSE POWER 3000 Watts

STAND-OFF VOLTAGE

5 to 220 Volts

Recongnized File # E210467

1.0(25.4)MIN.

FEATURES

• Plastic package has Underwriters Laboratory

Flammability Classification 94V-O

• Glass passivated chip junction in P-600 package

• 3000W Peak Pulse Power capability at on 10/1000µs waveform

0.052(1.3)

0.048(1.2)

0.360(9.1)

• Excellent clamping capability

• Low zener impedance

• Repetition rate(Duty Cycle):.05%

• Fast response time: typically less than 1.0 ps from 0 volts to BV min

• High temperature soldering guaranteed: 260°C/10 seconds/.375"

,(9.5mm) lead length/5lbs., (2.3kg) tension

• Lead free in comply with EU RoHS 2002/95/EC directives

0.340(8.6)

MECHANICAL DATA

• Case: JEDEC P-600 molded plastic

• Terminals: Axial leads, solderable per MIL-STD-750, Method 2026

• Polarity: Color band denotes cathode end

• Mounting Position: Any

• Weight: 1.75 ounce, 0.067 gram

DEVICES FOR BIPOLAR APPLICATIONS

For Bidirectional use C or CA Suffix for types 3KP5.0 thru types 3KP220

Electrical characteristics apply in both directions.

MAXIMUM RATINGS AND CHARACTERISTICS

Rating at 25°Cambient temperature unless otherwise specified.

Rating

Peak Power Dissipation at T

=25

C, T

=1ms (Notes 1)

Typical Thermal Resistance Junction to Air Lead Lengths .375", (9.5mm) (Notes 2)

Peak Pulse Current on 10/1000μs waveform (Notes 1)

Peak Forward Surge Current, 8.3ms Single Half Sine-Wave

Superimposed on Rated Load (JECED Method) (Notes 3)

Operating Junction and Storage Temperature Range

Symbol

θJA

PPM

FSM

STG

Value

3000

see Table

300

-55 to +175

Units

Watts

1.0(25.4)MIN.

0.360(9.1)

0.340(8.6)

C/W

Amps

NOTES :

1.Non-repetitive current pulse, per Fig. 3 and derated above T

=25°C per Fig. 2.

2.Mounted on Copper Leaf area of 0.79in

(20mm

3.8.3ms single half sine-wave, duty cycle= 4 pulses per minutes maximum.

4.A transient suppressor is selected according to the working peak reverse voltage (V

RWM

), which should be equal to or greater than the DC

or continuous peak operating voltage level.

November 21,2012-REV.05

PAGE . 1

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