2SD880
Plastic-Encapsulate Transistors
Features
Power dissipation
P
CM:
1.5
W (Tamb=25℃)
NPN
TO—220
Collector current
I
CM:
3 A
Collector-base voltage
60 V
V
(BR)CBO
:
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition Frequency
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
f
T
1. BASE 2. COLLECTOR 3. EMITTER
unless otherwise specified)
Test
conditions
MIN
60
60
7
100
100
60
300
1
1
3
70
0.8
I
B1
=-I
B2
=0.2A, I
C
=2A
V
CC
=30V, PW=20µs
1.5
0.8
V
V
MHz
TYP
MAX
UNIT
V
V
V
µA
µA
Ic=100µA, I
E
=0
Ic=50mA, I
B
=0
I
E
= 100µA, I
C
=0
V
CB
=60V, I
E
=0
V
EB
=7V, I
C
=0
V
CE
=5V, I
C
=500mA
I
C
=3A, I
B
=300mA
I
C
=0.5A, V
CE
= 5V
V
CE
=5 V, I
C
=500mA
V
CE
=10V, I
E
=0, f=1MHz
Collector output capacitance
Turn on time
Storage time
Fall time
C
ob
t
on
t
s
t
f
pF
µs
µs
µs
CLASSIFICATION OF h
FE
Rank
Range
O
60-120
Y
100-200
GR
150-300
Microcontroller MCU
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