EEWORLDEEWORLDEEWORLD

Part Number

Search

2SD1899K

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size198KB,2 Pages
ManufacturerJCET
Websitehttp://www.cj-elec.com/
Environmental Compliance

Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); ​​QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

 

 

Download Datasheet Parametric View All

2SD1899K Overview

Transistor

2SD1899K Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)3 A
ConfigurationSingle
Minimum DC current gain (hFE)200
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)1 W
surface mountYES
Base Number Matches1

2SD1899K Preview

Download Datasheet
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252 Plastic-Encapsulate Transistors
2SD1899
TRANSISTOR (NPN)
TO – 252
1. BASE
2. COLLECTOR
3. EMITTER
FEATURES
Low V
CE(sat)
High Transition Frequency
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
60
60
7
3
1
125
150
-55~+150
Unit
V
V
V
A
W
℃/W
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)*
h
FE(2)
*
Test
conditions
Min
60
60
7
Typ
Max
Unit
V
V
V
I
C
=100µA,I
E
=0
I
C
=1mA,I
B
=0
I
E
=100µA,I
C
=0
V
CB
=60V,I
E
=0
V
EB
=7V,I
C
=0
V
CE
=2V, I
C
=0.2A
V
CE
=2V, I
C
=0.6A
V
CE
=2V, I
C
=2A
10
10
60
100
50
0.25
1.2
30
120
400
μA
μA
h
FE(3)*
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Transition frequency
*Pulse test: pulse width
≤350μs,
duty cycle≤ 2.0%.
V
CE(sat)
C
ob
f
T
*
*
V
BE(sat)
I
C
=1.5A,I
B
=0.15A
I
C
=1.5A,I
B
=0.15A
V
CB
=10V,I
E
=0, f=1MHz
V
CE
=5V,I
C
=1.5A
V
V
pF
MHz
CLASSIFICATION OF h
FE(2)
RANK
RANGE
M
100-200
L
160-320
K
200-400
Visual operation makes sound more intuitive
GLFore G100 is a portable real-time acoustic imager that can visualize the sound source in the form of a color contour map, forming a detection effect similar to that of a thermal imager on the temper...
missu11 Automotive Electronics
RFID distance-coupling type
In the RFID system, the working distance between the reader and the electronic tag is an important indicator of RFID application. This distance is closely related to the cooperation between the RFID t...
fish001 RF/Wirelessly
Free application is back! BCM product evaluation samples are waiting for you!
[font=微软雅黑][size=3]The ultra-high voltage BCM is a high-efficiency fixed ratio converter with K=1/16 that can achieve 400 - 700V input and generate an unregulated SELV DC output. The first batch of pr...
eric_wang Power technology
New uses for old mobile phones (5) - Install KeDao Cloud
All the preparations we have made are to run Kedao Cloud as a portable server on the mobile phone. First, let me briefly introduce Kedao Cloud. Kedao Cloud can be said to be the simplest private cloud...
dcexpert DIY/Open Source Hardware
「Power amplifier experiment case」Application of ATA-2161 high voltage amplifier in lossless transportation
「Power amplifier experiment case」Application of ATA-2161 high voltage amplifier in lossless transportation...
aigtekatdz Test/Measurement
[Second Batch of Shortlist] GigaDevice GD32L233 Review Activity
[Review details] Try GigaDevice GD32L233 and start the energy-saving "chip" era![Date for receiving the prize] Please be sureto complete the prize confirmation according to the prize confirmation proc...
EEWORLD社区 GD32 MCU

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

About Us Customer Service Contact Information Datasheet Sitemap LatestNews

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190

Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号