EEWORLDEEWORLDEEWORLD

Part Number

Search

2SD1616

Description
NPN transistor
CategoryDiscrete semiconductor   
File Size113KB,1 Pages
ManufacturerJCET
Websitehttp://www.cj-elec.com/

Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); ​​QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

 

 

Download Datasheet View All

2SD1616 Overview

NPN transistor

Features

Product Name: NPN Transistor


Product model: 2SD1616



Product parameters:


Pcm (maximum power dissipation): 750mW


Ic (collector current): 1000mA


BVcbo (Collector-Base Breakdown Voltage): 60V


BVceo (Collector-Emitter Breakdown Voltage): 50V


BVebo (emitter-base breakdown voltage): 6V


hFE (current gain): Min: 135, Max: 600


VCE (sat) saturation voltage drop: 0.3V


fT (transition frequency): 100MHz



Package: TO-92

2SD1616 Preview

Download Datasheet
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO – 92
2SD1616
TRANSISTOR (NPN)
1. EMITTER
FEATURES
Low V
CE(sat)
Complementary Transistor with The 2SB1116
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
60
50
6
1
750
166
150
-55~+150
Unit
V
V
V
A
mW
℃/W
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)*
h
FE(2)
*
*
*
Test
conditions
Min
60
50
6
Typ
Max
Unit
V
V
V
I
C
= 0.01mA,I
E
=0
I
C
=2mA,I
B
=0
I
E
=0.01mA,I
C
=0
V
CB
=60V,I
E
=0
V
EB
=6V,I
C
=0
V
CE
=2V, I
C
=100mA
V
CE
=2V, I
C
=1A
I
C
=1A,I
B
=50mA
I
C
=1A,I
B
=50mA
V
CE
=2V, I
C
=50mA
V
CB
=10V,I
E
=0, f=1MHz
V
CE
=2V,I
C
=100mA
0.1
0.1
135
81
0.3
1.2
0.6
100
0.7
19
600
μA
μA
V
CE(sat)
V
BE (sat)
V
BE
f
T
*
V
V
V
pF
MHz
C
ob
*Pulse test: pulse width
≤350μs,
duty cycle≤ 2.0%.
CLASSIFICATION OF h
FE
RANK
RANGE
L
135-270
K
200-400
U
300-600
A,Dec,2010
Canaan wants to record a video about K510. What kind of content do you hope to see? (Attached is the official information about K510)
The K510 board just arrived this morning . In order to help engineers get started with development, Canaan plans to record a training video. The initial idea is to include: -How to master board develo...
nmg Domestic Chip Exchange
Share some difficult problems with the LM25116EN chip
[i=s] This post was last edited by qwqwqw2088 on 2019-2-21 10:53 [/i] [size=4][b]Question 1: After the LM25116EN end is pulled high, there is no response when it is pulled low [/b][/size] [size=4] [/s...
qwqwqw2088 Analogue and Mixed Signal
[RVB2601 Creative Application Development] Dynamically loading MBRE Postscript
Originally, the project was finished and I was going to leave it here, but RVB2601 (E906) has many market competitors in the same RISCV market. Here are some explanations and thoughts on the competing...
cqcqwind XuanTie RISC-V Activity Zone
Distance of ESD tip discharge needle
When laying out the LAY board, what are the requirements for the distance between the ESD tip discharge needle? How to determine the distance? My product is weak current, mainly for anti-static...
aq1261101415 PCB Design
Bone Vibration Sensor LIS25BA-Anti-Wind Noise Example
Article from: STMicroelectronics AMG official WeChat public accountPreviously, we introduced STMicroelectronics' latest bone vibration sensor LIS25BA , which is used to detect the vibration of the voc...
nmg MEMS sensors

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

About Us Customer Service Contact Information Datasheet Sitemap LatestNews

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190

Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号