2SC3930VB(SOT-323) datasheet, PDF

Datasheet> All Categories > Discrete semiconductor> The transistor> 2SC3930VB(SOT-323)

2SC3930VB(SOT-323): DescriptionTransistor; CategoryDiscrete semiconductor The transistor; File Size147KB，3 Pages; ManufacturerJCET; Websitehttp://www.cj-elec.com/; Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

Download Datasheet Parametric View All

2SC3930VB(SOT-323) Overview

Transistor

2SC3930VB(SOT-323) Parametric

Parameter Name	Attribute value
package instruction	,
Reach Compliance Code	unknow
Base Number Matches	1

2SC3930VB(SOT-323) Preview

Download Datasheet

View All

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-323 Plastic-Encapsulate Transistors

2SC3930

SOT-323

TRANSISTOR (NPN)

FEATURES

For high-frequency Amplification Complementary to 2SA1532

Optimum for RF amplification of FM/AM radios

High transition frequency f

MAXIMUM RATINGS (T

=25℃ unless otherwise noted)

Symbol

CBO

CEO

EBO

stg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

Value

150

-55-150

Units

℃

1.BASE

2.EMITTER

3.COLLECTOR

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Transition frequency

Common emitter reverse transfer

capacitance

Noise figure

Reverse transfer impedance

Symbol

(BR)CBO

(BR)CEO

(BR)EBO

CBO

EBO

Cre

Test

conditions

MIN

0.1

150

1.5

220

MHz

Ω

TYP

MAX

UNIT

μA

=100μA,

= 100μA, I

=10V,I

=5V,I

=10V,I

=1mA

=10V,I

=1mA,

f=200MHZ

=10V,I

=1mA,

f=10.7MHZ

=10V,I

=1mA, f=5MHz

=10V,I

=1mA, f=2MHz

CLASSIFICATION OF h

FE(1)

Marking

Range

70-140

110-220

Recommended Resources

CR charge and discharge circuit diagram

Maintenance circuit of high frequency electronic ballast

JSKJ type transistor time relay circuit (AC)

Differential amplifier circuit with a bandwidth of 20MHZ

Fast detection circuit for AC power drop

Computer motherboard circuit diagram 810 1_29

C2000 floating point calculation notes - differences between CPU and CLA and error handling techniques: The C2000 microprocessor with C28x+FPU architecture adds some registers and instructions to the original C28x fixed-point CPU to support IEEE single-precision floating-point operations. The floating-p...; alan000345 Microcontroller MCU

TMS320F28335GPIO Example - Light up the LED: The circuit schematic is shown below:代码： #include "DSP2833x_Device.h"// DSP2833x Headerfile Include File #include "DSP2833x_Examples.h"// DSP2833x Examples Include File#defineLED1 GpioDataRegs.GPBDAT....; fish001 DSP and ARM Processors

Building an assisted driving system algorithm based on FPGA platform: Building an assisted driving system algorithm based on FPGA platform...; zxopenljx EE_FPGA Learning Park

Why does my MSP430F5529 clock initialization use the high-speed XT1 mode, and XT1HFOFFG is always high?: MCU:MSP430F5529 I want to use the XT1 high-speed frequency mode of this microcontroller, but after configuration, the XT1HFOFFG flag is always high. I am now connected to a 12M passive crystal oscilla...; yg776 Microcontroller MCU

Practice together in 2021 + publish more papers and patents: 2020 has passed, with both joy and reluctance. I am happy that the projects that have troubled me for a long time have finally made significant progress, the causes of the problems have been found, an...; clockwise Talking

Share your experience in learning msp430 series microcontrollers: There are many unclear points in my learning process. I will briefly explain the unclear points in this article to prevent misleading everyone. About the characteristics of msp430,the msp430 series mi...; 灞波儿奔 Microcontroller MCU

Popular Components