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2SC2411K-R2-10001

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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2SC2411K-R2-10001 Overview

Transistor

2SC2411K-R2-10001 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instruction,
Reach Compliance Codecompli
Maximum collector current (IC)0.5 A
ConfigurationSingle
Minimum DC current gain (hFE)120
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.225 W
surface mountYES
Base Number Matches1

2SC2411K-R2-10001 Preview

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2SC2411K
NPN GENERAL PURPOSE SWITCHING TRANSISTOR
VOLTAGE
FEATURES
• NPN epitaxial silicon,planar design
• Collector-emitter voltage V
CE
=32V
• Collector current IC=500mA
• Lead free in comply with EU RoHS 2011/65/EU directives.
• Green molding compound as per IEC61249 Std. . (Halogen Free)
0.120(3.04)
0.110(2.80)
32 Volts
POWER
225mW
0.006(0.15)MIN.
0.008(0.20)
0.003(0.08)
0.044(1.10)
0.035(0.90)
0.020(0.50)
0.013(0.35)
0.056(1.40)
0.047(1.20)
MECHANICAL DATA
Case : SOT-23 plastic
Terminals : Solderable per MIL-STD-750, Method 2026
Approx Weight : 0.0003 ounces, 0.0084 grams
Marking : 241
0.079(2.00)
0.070(1.80)
0.004(0.10)
0.000(0.00)
ABSOLUTE RATINGS (T
A
=25
o
C)
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
32
40
5
500
Units
V
V
V
mA
THERMAL CHARACTERISTICS
Parameter
M a x. P o we r D i s s i p a ti o n ( No te 1 )
The r m a l Re s i s ta nc e , J unc ti o n to A m b i e nt
J unc ti o n Te m p e ra ti o n
S to r a g e Te m p e ra ti o n
S ym b o l
P
TO T
R
JA
T
J
T
S TG
Va lue
225
556
- 5 5 to +1 5 0
- 5 5 to +1 5 0
Uni ts
mW
O
C /W
O
C
C
O
NOTE : 1.Transistor mounted on FR-4 board 70 x 60 x 1mm
November 16,2013-REV.02
PAGE . 1
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