2SC1623 datasheet, PDF - EEWORLD Datasheet

2SC1623: DescriptionRated power: 200mW Collector current Ic: 100mA Collector-emitter breakdown voltage Vce: 50V Transistor type: NPN; CategoryDiscrete semiconductor triode; File Size186KB，2 Pages; ManufacturerShenzhen Heketai Electronics Co., Ltd.; Websitehttp://www.heketai.com; Founded in 1992, Hekotech is a high-tech innovative enterprise specializing in the R&D, design, packaging, testing, production and sales of semiconductor analog chips and discrete devices. The product line includes lithium battery protection IC, charging management IC, LDO, MOSFET, diode, TVS, bridge stack, triode and other discrete devices and integrated circuits, providing customers with application solutions and on-site technical support services. The company has ISO9001, ISO14001, IATF16949 quality system certification. The products include semiconductors and passive components, which are widely used in power supply, lighting, medical electronics, small appliances, communications, security, instruments, industrial control, automotive electronics and other fields.

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2SC1623 Overview

Rated power: 200mW Collector current Ic: 100mA Collector-emitter breakdown voltage Vce: 50V Transistor type: NPN

Parameter Name	Attribute value
rated power	200mW
Collector current Ic	100mA
Collector-emitter breakdown voltage Vce	50V
Transistor type	NPN

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