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2SB1197_R1_00001

Description
Small Signal Bipolar Transistor
CategoryDiscrete semiconductor    The transistor   
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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2SB1197_R1_00001 Overview

Small Signal Bipolar Transistor

2SB1197_R1_00001 Parametric

Parameter NameAttribute value
Reach Compliance Codecompli
Base Number Matches1

2SB1197_R1_00001 Preview

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P2SB1197
PNP Low Vce(sat) Transistor
Voltage
Features
-30V
Current
-1A
SOT-23
Unit: inch(mm)
Silicon PNP epitaxial type
Low Vce(sat) -0.2V(max)@Ic/Ib= -1A/-100mA
High collector current capability
Excellent DC current gain characteristics
Lead free in compliance with EU RoHS 2011/65/EU
directive.
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-23 Package
Terminals : Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0003 ounces, 0.0084 grams
Marking: B97
Maximum Ratings and Thermal Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Collector Power Dissipation
Operating Junction and Storage Temperature Range
Thermal Resistance from Junction to Ambient
(Note )
Note: Mounted on FR4 PCB at 1 inch square copper pad.
o
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
D
T
J
,T
STG
R
θJA
LIMIT
UNITS
V
V
V
A
A
mW
o
o
-50
-30
-5
-1
-2
310
-55~150
403
C
C/W
June 18,2014-REV.00
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