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2SB1197A_R1_00001

Description
Power Bipolar Transistor
CategoryDiscrete semiconductor    The transistor   
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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2SB1197A_R1_00001 Overview

Power Bipolar Transistor

2SB1197A_R1_00001 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPANJIT
Reach Compliance Codecompli
Maximum collector current (IC)3 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)50
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Transistor component materialsSILICON
Nominal transition frequency (fT)180 MHz

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Download Datasheet
P2SB1197A
PNP Low Vce(sat) Transistor
Voltage
Features
-50V
Current
-3A
SOT-23
Unit: inch(mm)
Silicon PNP epitaxial type
Low Vce(sat) -0.5V(max)@Ic/Ib= -2A/-200mA
High collector current capability
Excellent DC current gain characteristics
Lead free in compliance with EU RoHS 2011/65/EU
directive.
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-23 Package
Terminals : Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0003 ounces, 0.0084 grams
Maximum Ratings and Thermal Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Collector Power Dissipation
Operating Junction and Storage Temperature Range
Typical Thermal Resistance from Junction to Ambient
(Note )
Note: Mounted on FR4 with 2oz. PCB at 1 inch square copper pad.
o
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
D
T
J
,T
STG
R
θJA
LIMIT
UNITS
V
V
V
A
A
W
o
o
-50
-50
-7
-3
-3.5
1.25
-55~150
100
C
C/W
May 6,2016-REV.00
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