2SB023040MLJY datasheet, PDF - EEWORLD Datasheet

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2SB023040MLJY: DescriptionSCHOTTKY BARRIER DIODE CHIPS; CategoryDiscrete semiconductor diode; File Size14KB，1 Pages; ManufacturerSilan; Websitehttp://www.silanic.com.cn/; Environmental Compliance; Hangzhou Silan Microelectronics Co., Ltd. (SSE stock code: Silan Micro, 600460) is located in Hangzhou High-tech Industrial Development Zone. It is a high-tech enterprise specializing in integrated circuit chip design and semiconductor microelectronics related product production. The company's current main products are integrated circuits and semiconductor products.

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2SB023040MLJY Overview

SCHOTTKY BARRIER DIODE CHIPS

2SB023040MLJY Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Silan
Reach Compliance Code	compli
ECCN code	EAR99
Configuration	SINGLE
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.37 V
Maximum non-repetitive peak forward current	0.2 A
Number of components	1
Maximum operating temperature	125 °C
Maximum output current	0.03 A
Maximum repetitive peak reverse voltage	40 V
surface mount	YES
technology	SCHOTTKY

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2SB023040MLJY

2SB023040MLJY SCHOTTKY BARRIER DIODE CHIPS

DESCRIPTION

2SB023040MLJY is a schottky barrier diode chips

fabricated in silicon epitaxial planar technology;

Low power losses, high efficiency;

Guard ring construction for transient protection;

High ESD capability;

High surge capability;

Packaged products are widely used in switching

power suppliers, polarity protection circuits and

other electronic circuits;

Chip Size:230µm X 230µm;

Chip Thickness: 155±20µm

Chip Topography and Dimensions

La: Chip Size: 230µm;

Lb: Pad Size: 140µm;

ORDERING SPECIFICATIONS

Product Name

2SB023040MLJY

Specification

For Au and AlSi wire bonding

package

ABSOLUTE MAXIMUM RATINGS

Parameters

Maximum Repetitive Peak Reverse Voltage

Average Forward Rectified Current

Peak Forward Surge Current@8.3ms

Maximum Operation Junction Temperature

Storage Temperature Range

Symbol

RRM

FAV

FSM

STG

Ratings

200

125

-40~125

Unit

°C

ELECTRICAL CHARACTERISTICS

(Tamb=25°C)

Parameters

Reverse Voltage

Forward Voltage

Reverse Current

Symbol

Test Conditions

=0.1m

=1mA

=30V

Min.

Max.

0.37

0.5

Unit

µA

HANGZHOU SILAN MICROELECTRONICS CO.,LTD

Http: www.silan.com.cn

REV:1.0

2007.09.18

Page 1 of 1

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