2N7002TB datasheet, PDF - EEWORLD Datasheet

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2N7002TB: DescriptionSmall Signal Mosfet Small Signal MOSFET; CategoryDiscrete semiconductor The transistor; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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2N7002TB Overview

Small Signal Mosfet Small Signal MOSFET

Features

Product Name: Small Signal Mosfet Small Signal MOSFET

Product model: 2N7002TB

Product parameters:

Channel: N

Configuration: Single

Drain-Source Voltage: VDSS: 60V

Gate-Source Voltage Maximum Gate-Source Voltage: VGSS: 20V

Drain Current: ID: 0.115A

Static Drain-Source On-Resistance： Vgs=10V，Rdson (max.)：5Ω；Vgs=4.5V，Rdson (max.)：7.5Ω

Input Capacitance: Vds=25V, Ciss: 50pF

Reverse Transfer Capacitance: Vds=25V, Crss: 5pF

Gate Charge: Vgs=5.0 (10) V, Qg: 0.6nC

Package: SOT-523

2N7002TB Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	PANJIT
package instruction	SMALL OUTLINE, R-PDSO-F3
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Other features	ULTRA LOW RESISTANCE
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (ID)	0.115 A
Maximum drain-source on-resistance	5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	5 pF
JESD-30 code	R-PDSO-F3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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2N7002TB

60V N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES

• R

DS(ON)

, V

@10V,I

@500mA=5Ω

• R

DS(ON)

, V

@4.5V,I

@50mA=7.5Ω

SOT-523

0.013(0.33)

0.009(0.23)

Unit

：

inch(mm)

• Advanced Trench Process Technology

• High Density Cell Design For Ultra Low On-Resistance

• Specially Designed for Battery Operated Systems, Solid-State

Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.

•

Lead free in comply with EU RoHS 2002/95/EC directives.

• Green molding compound as per IEC61249 Std. . (Halogen Free)

0.052(1.30)

0.043(1.10)

0.044(1.10)

0.035(0.90)

0.067(1.70)

0.059(1.50)

MECHANICAL DATA

• Case: SOT-523, Plastic

• Terminals: Solderable per MIL-STD-750, Method 2026

• Approx. Weight: 0.002 grams

• Marking: 72

0.012(0.30)

0.004(0.10)

Maximum Ratings and Thermal Characteristics (T

=25

C unless otherwise noted )

PARAMETER

Drain-Source Voltage

Gats-Source Voltage

Continous Drain Current

Pulsed Drain Current

(1)

Maximum Power Dissipation

Junction-to Ambient Thermal Resistance (PCB mounted)

O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e

=25

=75 C

SYMBOL

0.007(0.17)

0.002(0.07)

0.067(1.70)

0.059(1.50)

0.024(0.60)

0.019(0.50)

LIMIT

+20

115

800

150

833

-55 to 150

UNITS

, T

S TG

C/W

Note 1 : Maximum DC current limited by the package

2 : Surface mounted on FR4 board,t <10 sec

PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DSEIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE

REV.0.1-FEB.10.2009

PAGE . 1

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