PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.
Small Signal Mosfet Small Signal MOSFET
300 mA, 60 V, N沟道, 硅, 小信号, 场效应管
Features
Product Name: Small Signal Mosfet Small Signal MOSFET
Product model: 2N7002
Product parameters:
Channel: N
Configuration: Single
Drain-Source Voltage: VDSS: 60V
Gate-Source Voltage Maximum Gate-Source Voltage: VGSS: 20V
Drain Current: ID: 0.25A
Static Drain-Source On-Resistance: Vgs=10V,Rdson (max.):5Ω;Vgs=4.5V,Rdson (max.):7.5Ω
Input Capacitance: Vds=25V, Ciss: 50pF
Reverse Transfer Capacitance: Vds=25V, Crss: 5pF
Gate Charge: Vgs=5.0 (10) V, Qg: 0.6nC
Package: SOT-23
Parameter Name | Attribute value |
Is it lead-free? | Lead free |
Is it Rohs certified? | conform to |
package instruction | ROHS COMPLIANT PACKAGE-3 |
Contacts | 3 |
Reach Compliance Code | compli |
ECCN code | EAR99 |
Other features | ULTRA-LOW RESISTANCE |
Configuration | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 60 V |
Maximum drain current (Abs) (ID) | 0.115 A |
Maximum drain current (ID) | 0.25 A |
Maximum drain-source on-resistance | 5 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
Maximum feedback capacitance (Crss) | 5 pF |
JESD-30 code | R-PDSO-G3 |
JESD-609 code | e3 |
Number of components | 1 |
Number of terminals | 3 |
Operating mode | ENHANCEMENT MODE |
Maximum operating temperature | 150 °C |
Minimum operating temperature | -55 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Peak Reflow Temperature (Celsius) | 260 |
Polarity/channel type | N-CHANNEL |
Maximum power dissipation(Abs) | 0.35 W |
Certification status | Not Qualified |
surface mount | YES |
Terminal surface | Matte Tin (Sn) |
Terminal form | GULL WING |
Terminal location | DUAL |
Maximum time at peak reflow temperature | 40 |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
Base Number Matches | 1 |
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