2N60G-CB-AA3-R datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> MOS (field effect tube)> 2N60G-CB-AA3-R

2N60G-CB-AA3-R: DescriptionDrain-source voltage (Vdss): 600V Continuous drain current (Id) (at 25°C): 2A Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 5Ω @ 1A, 10V Maximum power dissipation (Ta= 25°C): 44W Type: N channel N channel, 600V, 2A; CategoryDiscrete semiconductor MOS (field effect tube); File Size288KB，7 Pages; ManufacturerUTC(Unisonic Technologies Co., Ltd.); Websitehttp://www.utc-ic.com/; Founded in 1990, Youshun Technology Co., Ltd. focuses on the research and development, design, manufacturing, packaging, testing and marketing of analog ICs and discrete components.

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2N60G-CB-AA3-R Overview

Drain-source voltage (Vdss): 600V Continuous drain current (Id) (at 25°C): 2A Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 5Ω @ 1A, 10V Maximum power dissipation (Ta= 25°C): 44W Type: N channel N channel, 600V, 2A

2N60G-CB-AA3-R Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	600V
Continuous drain current (Id) at 25°C	2A
Gate-source threshold voltage	4V @ 250uA
Drain-source on-resistance	5Ω @ 1A,10V
Maximum power dissipation (Ta=25°C)	44W
type	N channel

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