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2312

Description
Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 6.8A Gate-source threshold voltage: 900mV @ 250uA Drain-source on-resistance: 21mΩ @ 4.5A, 4.5V Maximum power dissipation (Ta=25°C): 1.25W Type: N channel N channel, 20V, 6.8A, 21mΩ@4.5V
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size1MB,5 Pages
ManufacturerGoford Semiconductor
Websitehttp://www.goford.cn/
Shenzhen Gufeng Electronics Co., Ltd. GOFORD SEMICONDUCTOR was established in Hong Kong in 1995. Now it has established branches, offices and agency networks all over the world. National high-tech enterprises. GOFORD focuses on the research and development, production and sales of semiconductor power components MOSFET field effect tubes. The company provides high-reliability products through strict quality management system and assessment; continuous technological research and development innovation to meet the needs of market segments and product cost-effectiveness; with a global layout vision, it continues to promote the popularity of the GOFORD brand in the field of power devices. GOFORD is committed to creating a world-renowned power device brand!
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2312 Overview

Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 6.8A Gate-source threshold voltage: 900mV @ 250uA Drain-source on-resistance: 21mΩ @ 4.5A, 4.5V Maximum power dissipation (Ta=25°C): 1.25W Type: N channel N channel, 20V, 6.8A, 21mΩ@4.5V

2312 Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)20V
Continuous drain current (Id) at 25°C6.8A
Gate-source threshold voltage900mV @ 250uA
Drain-source on-resistance21mΩ @ 4.5A,4.5V
Maximum power dissipation (Ta=25°C)1.25W
typeN channel

2312 Preview

Download Datasheet
GOFORD
2312
Description
The 2312 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
battery protection or in other switching application.
D
G
S
General Features
V
DS
= 20V,I
D
= 6.8A
R
DS(ON)
=18m
(TYP)
@ V
GS
=2.5V
R
DS(ON)
=15m
(TYP)
@ V
GS
=4.5V
High power and current handing capability
Lead free product is acquired
Surface mount package
Schematic diagram
Marking and pin assignment
Application
●Battery
protection
●Load
switch
●Power
management
SOT-23 top view
Absolute Maximum Ratings (T
A
=25℃unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Drain Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T
A
=25℃
T
A
=70℃
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
STG
Limit
20
±10
6.8
5.4
20
1.25
-55 To 150
Unit
V
V
A
A
W
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
R
θJA
100
/W
Electrical Characteristics (T
A
=25℃unless otherwise noted)
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0V I
D
=250μA
20
22
-
V
Symbol
Condition
Min
Typ
Max
Unit
HTTP://www.gofordsemi.com
TEL:0755-29961262
FAX:0755-29961466
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