Shenzhen Gufeng Electronics Co., Ltd. GOFORD SEMICONDUCTOR was established in Hong Kong in 1995. Now it has established branches, offices and agency networks all over the world. National high-tech enterprises. GOFORD focuses on the research and development, production and sales of semiconductor power components MOSFET field effect tubes. The company provides high-reliability products through strict quality management system and assessment; continuous technological research and development innovation to meet the needs of market segments and product cost-effectiveness; with a global layout vision, it continues to promote the popularity of the GOFORD brand in the field of power devices. GOFORD is committed to creating a world-renowned power device brand!
The 2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
VDS = -20V,ID = -3A RDS(ON) < 140mΩ @ VGS=-2.5V RDS(ON) < 110mΩ @ VGS=-4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package
parameter:
Drain-Source Voltage VDS -20 V
Gate-Source Voltage VGS ±12 V
Drain Current-Continuous ID -3 A
Drain Current -Pulsed (Note 1) IDM -10 A
Maximum Power Dissipation PD 1 W
Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃
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