20N50 datasheet, PDF - EEWORLD Datasheet

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20N50: DescriptionMOSFET; CategoryDiscrete semiconductor; File Size2MB，7 Pages; ManufacturerGoford Semiconductor; Websitehttp://www.goford.cn/; Shenzhen Gufeng Electronics Co., Ltd. GOFORD SEMICONDUCTOR was established in Hong Kong in 1995. Now it has established branches, offices and agency networks all over the world. National high-tech enterprises. GOFORD focuses on the research and development, production and sales of semiconductor power components MOSFET field effect tubes. The company provides high-reliability products through strict quality management system and assessment; continuous technological research and development innovation to meet the needs of market segments and product cost-effectiveness; with a global layout vision, it continues to promote the popularity of the GOFORD brand in the field of power devices. GOFORD is committed to creating a world-renowned power device brand!

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20N50 Overview

MOSFET

Features

Product Name: MOSFET

Product model: 20N50

Product Description:

The OGFD 20N50 is produced using advanced

planar stripe DMOS technology. This high density

process is especially tailored to minimize on-state

resistance.

These devices are particularly suited for low voltage

application such as cellular phone and notebook

computer power management and other battery

powered circuits where high-side switching and low

in-line power loss are needed in a very small outline

surface mount package.

parameter:

Drain-Source Voltage VDS 500 V

Drain Current-Continuous ID 120 A

Drain Current -Pulsed (Note 1) IDM 80 A

Maximum Power Dissipation PD 280W

VGS Gate-to-Source Voltage ± 30 V

EAS Single PulseAvalanche Energy 1110 mJ

Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns

Package: TO-3P

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20N50

N-Channel MOSFETS

DESCRIPTION

The OGFD 20N50 is produced using advanced

planar stripe DMOS technology.

This high density

DSS

500V

DS(

)

20A

process is especially tailored to minimize on-state

resistance.

These devices are particularly suited for low voltage

application such as cellular phone and notebook

computer power management and other battery

powered circuits where high-side switching and low

in-line power loss are needed in a very small outline

0.26

TO-3P

surface mount package.

Features

•

20.0A,500V,R

DS(ON)

=0.26 Ω@V

=10V

Low gate charge (typical 70Nc)

Fast switching

20N50

100% avalanche tested

Improved dv/dt capability

TO-3P

0GFD

Ordering Information

PART NUMBER

PACKAGE

BRAND

www.goford.cn

TEL：0755-86350980 FAX：0755-86350963

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