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1SS370

Description
switching diode
CategoryDiscrete semiconductor    diode   
File Size824KB,1 Pages
ManufacturerJCET
Websitehttp://www.cj-elec.com/

Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); ​​QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

 

 

Download Datasheet View All

1SS370 Overview

switching diode

Features

Product Name: Switching Diode


Product model: 1SS370


product features:


High voltage, high speed switching applications


Low forward voltage


Fast reverse recovery time


Small total capacitance



Product parameters:


Pd power dissipation: 100mW


Io rectified current: 100mA


VR reverse working voltage: 200V


VF forward buck: 1.2V


IR reverse current: 1uA


Trr forward recovery time: 60+ns



Package: SOT-323

1SS370 Preview

Download Datasheet
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Diode
SOT-323
1SS370
SWITCHING DIODE
FEATURES
High
voltage, high speed switching applications
Low forward voltage
Fast reverse recovery time
Small total capacitance
MAKING: F5
1
3
2
Maximum Ratings @Ta=25℃
Parameter
Peak reverse voltage
DC reverse voltage
Peak forward current
Mean rectifying current
Surge current (t=10ms)
Junction temperature
Storage temperature
Symbol
V
RM
V
R
I
FM
I
O
I
FSM
T
j
T
stg
Limit
250
200
300
100
2
150
-55~+150
Unit
V
V
mA
mA
A
Electrical Ratings @Ta=25℃
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
Symbol
V
F
I
R
C
T
t
rr
60
Min
Typ
Max
1
1.2
0.1
1
3.0
Unit
V
μA
pF
ns
Conditions
I
F
=10mA
I
F
=100mA
V
R
=50V
V
R
=200V
V
R
=0, f=1MHZ
V
R
=6V,I
F
=10mA,Irr=0.1*I
R
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