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1SS355

CategoryDiscrete semiconductor    Switching diode   
File Size719KB,3 Pages
ManufacturerSHIKUES
Websitehttp://www.shike.tw
Shike, originated from Taiwan, China, is one of the world's leading semiconductor discrete component manufacturers. It mainly provides engineers and designers with various semiconductor products and software, bringing better sensory experience to products such as automobiles, communications, computers, consumer electronics, industry, LED lighting, medical and power applications. Since its establishment, under the guidance of the core concept of "making products have good cores", with safety, low energy consumption and high performance as its purpose, Shike Semiconductor's R&D strategy has never wavered. Nearly a quarter of its employees work in the field of R&D and product design, and annual R&D expenses account for about 22% of total revenue. In addition, with the hard work of young, dream-filled and passionate employees, Shike has developed rapidly, and its products are exported to North America, Europe and the Asia-Pacific region. It is considered one of the most innovative companies in the semiconductor industry. Shike will continue to optimize in terms of safety, energy consumption and performance, and more flexibly meet the needs of design engineers and the ever-changing market. From concept design to production and manufacturing, we will provide full support. Looking to the future, we will focus on innovation and continue to create value for our customers, employees and society as a whole. By reducing energy consumption, improving safety and enhancing performance, we will focus on how to use technological research and development to improve the quality of life of the public. We will go all out to fulfill our commitments.
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1SS355
Silicon Epitaxial Planar Switching Diode
Features
• Small plastic package suitable
for surface mounted design
• High reliability with high surge
current handling capability
Top View
Marking Code: A
Simplified outline SOD-323 and symbol
Applications
High speed switching
Absolute Maximum Ratings
(T
a
= 25 C)
O
Parameter
Peak Reverse Voltage
Reverse Voltage
Average Rectified Forward Current
Peak Forward Current
Surge Forward Current (1 s)
Junction Temperature
Storage Temperature Range
Symbol
V
RM
V
R
I
F(AV)
I
FM
I
FSM
T
j
T
stg
Value
90
80
100
225
500
150
- 55 to + 150
Unit
V
V
mA
mA
mA
O
C
C
O
Electrical Characteristics
(T
a
= 25 C)
O
Parameter
Forward Voltage
at I
F
= 100 mA
Reverse Current
at V
R
= 80 V
Capacitance between Terminals
at V
R
= 0.5 V, f = 1 MHz
Reverse Recovery Time
at V
R
= 6 V, I
F
= 10 mA, R
L
= 100
Symbol
V
F
I
R
C
T
t
rr
Max.
1.2
0.1
3
4
Unit
V
µA
pF
ns
REV.08
1 of 3
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