1SS355
Silicon Epitaxial Planar Switching Diode
Features
• Small plastic package suitable
for surface mounted design
• High reliability with high surge
current handling capability
Top View
Marking Code: A
Simplified outline SOD-323 and symbol
Applications
•
High speed switching
Absolute Maximum Ratings
(T
a
= 25 C)
O
Parameter
Peak Reverse Voltage
Reverse Voltage
Average Rectified Forward Current
Peak Forward Current
Surge Forward Current (1 s)
Junction Temperature
Storage Temperature Range
Symbol
V
RM
V
R
I
F(AV)
I
FM
I
FSM
T
j
T
stg
Value
90
80
100
225
500
150
- 55 to + 150
Unit
V
V
mA
mA
mA
O
C
C
O
Electrical Characteristics
(T
a
= 25 C)
O
Parameter
Forward Voltage
at I
F
= 100 mA
Reverse Current
at V
R
= 80 V
Capacitance between Terminals
at V
R
= 0.5 V, f = 1 MHz
Reverse Recovery Time
at V
R
= 6 V, I
F
= 10 mA, R
L
= 100
Ω
Symbol
V
F
I
R
C
T
t
rr
Max.
1.2
0.1
3
4
Unit
V
µA
pF
ns
REV.08
1 of 3