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1SS181

Description
switching diode
CategoryDiscrete semiconductor    diode   
File Size3MB,2 Pages
ManufacturerJCET
Websitehttp://www.cj-elec.com/

Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); ​​QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

 

 

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1SS181 Overview

switching diode

Features

Product Name: Switching Diode


Product model: 1SS181


product features:


Low forward voltage


Fast reverse recovery time



Product parameters:


Pd dissipated power: 150mW


Io rectified current: 100mA


VR reverse working voltage: 80V


VF forward buck: 1.2V


IR reverse current: 0.5uA


Trr Forward recovery time: 4ns



Package: SOT-23

1SS181 Parametric

Parameter NameAttribute value
MakerJCET
package instructionR-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
ConfigurationCOMMON ANODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.2 V
JESD-30 codeR-PDSO-G3
Number of components2
Number of terminals3
Maximum operating temperature150 °C
Maximum output current0.05 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum power dissipation0.15 W
Maximum repetitive peak reverse voltage80 V
Maximum reverse recovery time0.004 µs
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Base Number Matches1

1SS181 Preview

Download Datasheet
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
1SS181
SOT-23
Switching Diodes
FEATURES
Low forward voltage
Fast reverse recovery time
MARKING:
A3
1
3
2
Maximum Ratings @Ta=25℃
Parameter
Non-Repetitive Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current
Average Rectified Output Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
V
RM
V
R
I
FM
I
O
P
D
T
J
T
STG
Limit
85
80
300
100
150
150
-55~+150
Unit
V
V
mA
mA
mW
Electrical Characteristics @Ta=25℃
Parameter
Reverse breakdown voltage
Symbol
V
(BR)
V
F1
Forward voltage
V
F2
V
F3
I
R1
Reverse current
Capacitance between terminals
Reverse recovery time
I
R2
C
T
t
rr
2.2
1.6
Min
80
0.61
0.74
0.92
1.2
0.1
0.5
4.0
4.0
Typ
Max
Unit
V
V
V
V
uA
uA
pF
ns
Conditions
I
R
=100μA
I
F
=1mA
I
F
=10mA
I
F
=100mA
V
R
=30V
V
R
=80V
V
R
=0,f=1MHz
I
F
=I
R
=10mA,I
rr
=0.1×I
R
A,May,2011
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