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1SMB3EZ22-AU

Description
Product Status:Active, AEC-Q101 Qualified(mW):Y, PD(%):3000, VZ(V):5, VZ @ IZT Nom.(V):22, VZ @ IZT Min.(V):20.9, VZ @ IZT Max.(Ω):23.1, ZZT @ IZT Max.(mA):8, IZT(Ω):34
CategoryDiscrete semiconductor    diode   
File Size233KB,6 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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1SMB3EZ22-AU Overview

Product Status:Active, AEC-Q101 Qualified(mW):Y, PD(%):3000, VZ(V):5, VZ @ IZT Nom.(V):22, VZ @ IZT Min.(V):20.9, VZ @ IZT Max.(Ω):23.1, ZZT @ IZT Max.(mA):8, IZT(Ω):34

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1SMB3EZ4.7-AU SERIES
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES
VOLTAGE
FEATURES
• Built-in strain relief
• Glass passivated junction
• Low inductance
• Plastic package has Underwriters Laboratory Flammability
Classification 94V-O
• High temperature soldering : 260°C /10 seconds at terminals
• Acqire quality system certificate : TS16949
• AEC-Q101 qualified
• Lead free in comply with EU RoHS 2002/95/EC directives
0.096(2.44)
0.083(2.13)
0.083(2.11)
0.075(1.91)
0.185(4.70)
0.160(4.06)
0.155(3.94)
0.130(3.30)
0.012(0.305)
0.006(0.152)
0.050(1.27)
0.030(0.76)
0.220(5.59)
0.200(5.08)
1
2
4.7 to 51 Volts
POWER
3.0 Watts
• Low profile package
MECHANICAL DATA
• Case: JEDEC DO-214AA, Molded plastic over passivated junction
• Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
• Polarity : Color band denotes cathode end
• Standard packing: 12mm tape (E1A-481)
• Weight: 0.0032 ounce, 0.092 gram
Cathode
Anode
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Steady State Power Dissipation at T
L
=75
O
C (Note 1)
Peak Forward Surge Current 8.3ms single half sine-wave
superimposed on rated load (JEDEC method)
Operating Junction and Storage Temperature Range
Symbol
Value
3.0
15
-55 to + 150
Units
W atts
Amps
O
P
D
I
FSM
T
J
,T
STG
C
NOTE :
1. Mounted on infinite heatsink.
January 02,2012-REV.08
PAGE . 1
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