1SMA5914~1SMA5949
SURFACE MOUNT SILICON ZENER DIODE
VOLTAGE
FEATURES
• For surface mounted applications in order to optimize board space.
• Built-in strain relief
• Glass passivated junction
• Low inductance
• Typical I
R
less than 1.0µA above 12V
• Plastic package has Underwriters Laboratory Flammability
Classification 94V-O
• High temperature soldering : 260°C /10 seconds at terminals
.096(2.44)
.062(1.60)
.047(1.20)
.114(2.90)
.098(2.50)
3.6 to 100 Volts
POWER
1.5 Watts
SMA/DO-214AC
Unit: inch (mm)
• Low profile package
.181(4.60)
.157(4.00)
environment substance directive request
MECHANICALDATA
• Case: JEDEC DO-214AC,Molded plastic over passivated junction.
• Terminals: Solder plated,solderable per MIL-STD-750,
Method 2026
• Polarity: Color band denotes positive end (cathode)
• Standard Packaging:12mm tape (EIA-481)
• Weight: 0.002 ounce, 0.064 gram
.060(1.52)
.030(0.76)
.078(2.00)
• Pb free product : 99% Sn above can meet RoHS
.012(.305)
.006(.152)
.008(.203)
.002(.051)
.208(5.28)
.188(4.80)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
Pwak Pulse Power Dissipation on TA=70°C (Notes A)
Derate above 70°C
Peak Forward Surge Current 8.3ms single half sine-wave
superimposed on rated load (JEDEC method)
Operating and Storage Temperature Range
VALUE
1.5
UNITS
Watts
mW / °C
Amps
°C
P
D
I
FSM
T
J,
T
STG
15.0
10
-55 to +150
NOTES:
A.Mounted on 5.0mm2 (.013mm thick) land areas.
B.Measured on 8.3ms, and single half sine-wave or equivalent square wave ,duty cycle=4 pulses per minute maximum.
STAD-JAN.13.2006
PAGE . 1
1SMA5914~1SMA5949
N o m i n a l Ze n e r Vo l t a g e
Part N umber
No m.V
1SMA5914
1SMA5915
1SMA5916
1SMA5917
1SMA5918
1SMA5919
1SMA5920
1SMA5921
1SMA5922
1SMA5923
1SMA5924
1SMA5925
1SMA5926
1SMA5927
1SMA5928
1SMA5929
1SMA5930
1SMA5931
1SMA5932
1SMA5933
1SMA5934
1SMA5935
1SMA5936
1SMA5937
1SMA5938
1SMA5939
1SMA5940
1SMA5941
1SMA5942
1SMA5943
1SMA5944
1SMA5945
1SMA5946
1SMA5947
1SMA5948
1SMA5949
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
V z@ I zt
M i n. V
3.42
3.71
4.09
4.47
4.85
5.32
5.89
6.46
7.13
7.79
8.65
9.50
10.45
11.40
12.35
14.25
15.20
17.10
19.00
20.90
22.80
25.65
28.50
31.35
34.20
37.05
40.85
44.65
48.45
53.20
58.90
64.60
71.25
77.90
86.45
95.00
M a x. V
3.78
4.10
4.52
4.94
5.36
5.88
6.51
7.14
7.88
8.61
9.56
10.50
11.55
12.60
13.65
15.75
16.80
18.90
21.00
23.10
25.20
28.35
31.50
34.65
37.80
40.95
45.15
49.35
53.55
58.80
65.10
71.40
78.75
86.10
95.55
105.00
Ω
9
8
6
5
4
2
2
3
3
4
4
5
6
7
7
9
10
12
14
18
19
23
26
33
38
45
53
67
70
86
100
120
140
160
200
250
M a x i m u m Ze n e r I m p e d a n c e
Z
ZT
@ I
Z
t
mA
104.2
96.1
87.2
79.8
73.5
66.9
60.5
55.1
50.0
45.7
41.2
37.5
34.1
31.2
28.8
25.0
23.4
20.8
18.7
17.0
15.6
13.9
12.5
11.4
10.4
9.6
8.7
8.0
7.3
6.7
6.0
5.5
5.0
4.6
4.1
3.7
Ω
500
500
500
500
350
250
200
200
400
400
500
500
550
550
550
600
600
650
650
650
700
700
750
800
850
900
950
1000
1100
1300
1500
1700
2000
2500
3000
3100
Z
ZK
@ I
ZK
mA
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
0.50
0.50
0.50
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
µ
A
75.00
25.00
5.00
5.00
5.00
5.00
5.00
5.00
5.00
5.00
5.00
5.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
Max R everse
Leakage C urrent
I
R
@ V
R
V
1.00
1.00
1.00
1.50
2.00
3.00
4.00
5.20
6.00
6.50
7.00
8.00
8.40
9.10
9.90
11.40
12.20
13.70
15.20
16.70
18.20
20.60
22.80
25.10
27.40
29.70
32.70
35.80
38.80
42.60
47.10
51.70
56.00
62.20
68.20
76.00
914A
915A
916A
917A
918A
919A
920A
921A
922A
923A
924A
925A
926A
927A
928A
929A
930A
931A
932A
933A
934A
935A
936A
937A
938A
939A
940A
941A
942A
943A
944A
945A
946A
947A
948A
949A
Marking
C ode
STAD-JAN.13.2006
PAGE . 2
1SMA5914~1SMA5949
P
D
, MAXIMUM POWER DISSIPATION (WATTS)
qvz,
TEMPERATURE COEFICENT (mV/
O
C)
2.5
2
1.5
1
0.5
0
10
8
6
4
2
0
-2
-4
2
4
6
8
10
12
V @I
Z ZT
0
20
40
60
80
100
120 140 150 180
TL,LEADTEMPERA
TURE( C)
O
V , ZENER VOLTAGE (VOLTS)
Z
Fig.1 Steady State Power Derating
Fig.2 Zener Voltage - to 12 volts
qvz,
TEMPERATURE COEFICENT (mV/
O
C)
200
100
70
50
30
20
10
10
20
30
50
70
100
200
V @I
Z ZT
Zz, DYNAMIC IMPEDANCE (OHMS)
1K
500
200
100
50
20
10
5
2
1
0.5
1
2
5
10
20
VZ=150V
91V
T = 25
O
C
J
I (rms) =0.1 I (dc)
Z
Z
62V
22V
12V
6.8V
50
100 200
500
Vz, ZENER VOLTAGE (VOLTS)
Iz, ZENER TEST CURRENT (mA)
Fig.3 Zener Voltage - 14 to 200 Volts
Fig.4 Effect of Zener Current
1K
200
100
70
50
30
20
10mA
I Z (dc)=1mA
Ppk, PEAKSURGE POWER (WATTS)
Zz, DYNAMIC IMPEDANCE (OHMS)
500
300
200
100
50
30
20
10
0.1 0.20.3 0.5
RECTANGULAR
NONREPETITIVE
WAVEFORM
O
T J =25 C PRIOR
TO INTIAL PULSE
10
7
5
3
2
20mA
I Z (rms)=0.1I Z (dc)
5
7
10
20 3 0
40
50 60
70
100
1
2 3
5
10 20 30 50
100
Vz, ZENER VOLTAGE (VOLTS)
PW, PULSE WIDTH (ms)
Fig.5 Effect of Zener Voltage
Fig.6 Maximum Surge Power
STAD-JAN.13.2006
PAGE . 3
1SMA5914~1SMA5949
100
Iz, ZENER CURRENT (mA)
100
Iz, ZENER CURRENT (mA)
50
30
20
10
5
3
2
1
0.5
0.3
0.2
0.1
0
1
2
3
4
5
6
7
8
9
10
50
30
20
10
5
3
2
1
0.5
0.3
0.2
0.1
0
10
20
30
40
50
60
70
80
90 100
Vz, ZENER VOLTAGE (VOLTS)
Vz, ZENER VOLTAGE (VOLTS)
Fig.7 Vz = 6.8 thru 10 Volts
Fig.8 Vz = 12 thru 82 Volts
NOTE 3. ZENER VOLTAGE (Vz) MEASUREMENT
Nominal zener voltage is measured with the device function in thermal equilibrium with ambient
O
temperature at 25 C
NOTE 4. ZENER IMPEDANCE (Zz) DERIVATION
Zzt and Zzk are measured by dividing the ac voltage drop across the device by the accurrent applied.
The specified limits are for Iz(ac) = 0.1 Iz, (dc) with the ac freqency = 60Hz
LEGAL STATEMENT
Copyright PanJit International, Inc 2006
The information presented in this document is believed to be accurate and reliable. The specifications and information
herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the
suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or
systems. Pan Jit does not convey any license under its patent rights or rights of others.
STAD-JAN.13.2006
PAGE . 4
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