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1N5397-D1-0001

CategoryDiscrete semiconductor    General diode   
File Size444KB,4 Pages
ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.
Websitehttp://www.21yangjie.com/
Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.
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1N5391G THRU 1N5399G
General Purpose Rectifier
Features
● High efficiency
● High current capability
● High reliability
● High surge current capability
● Low power loss
● Glass passivated chip junction
● Solder dip 275 °C max. 7 s, per JESD 22-B106
RoHS
COMPLIANT
Mechanical Data
Package:
DO-204AC(DO-15)
Molding compound meets UL 94 V-0 flammability rating,
RoHS-compliant
Terminals:
Tin plated leads, solderable per J-STD-
002 and JESD22-B102
Polarity:
Color band denotes cathode end
■Maximum Ratings
(Ta=25℃ Unless otherwise specified)
PARAMETER
Device marking code
Repetitive Peak Reverse Voltage
Average Forward Current
@60Hz sine wave, Resistance load, Ta =50℃
Forward Surge Current (Non-repetitive)
@60Hz Half-sine wave,1 cycle, Ta=25℃
Storage Temperature
Junction Temperature
V
RRM
I
F(AV)
V
A
SYMBOL
UNIT
1N5391G
1N5391G
50
1N5392G
1N5392G
100
1N5393G
1N5393G
200
1N5395G
1N5395G
400
1.5
1N5397G
1N5397G
600
1N5398G
1N5398G
800
1N5399G
1N5399G
1000
I
FSM
Tstg
Tj
A
50
-55 ~+150
-55~+150
■Electrical
Characteristics
(T
a
=25℃ Unless otherwise specified)
PARAMETER
Maximum instantaneous
forward voltage drop per diode
Maximum DC reverse current
at rated DC blocking voltage
per diode
SYMBOL
V
FM
I
RRM1
μA
I
RRM2
Ta=100℃
Measured at 1MHZ
and Applied Reverse
Voltage of 4.0 V.D.C.
50
UNIT
V
TEST CONDITIONS 1N5391G 1N5392G 1N5393G 1N5395G 1N5397G 1N5398G 1N5399G
I
FM
=1.5A
Ta=25℃
1.1
2.5
Typical junction capacitance
Cj
pF
15
Thermal Characteristics
(T
a
=25℃ Unless otherwise specified)
PARAMETER
Thermal Resistance(Typical)
SYMBOL
R
θJ-A
UNIT
℃/W
1N5391G
1N5392G
1N5393G
1N5395G
50
1N5397G
1N5398G
1N5399G
1/4
S-A025
Rev.2.1,28-Apr-14
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
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