1N5395GSC1 datasheet, PDF - EEWORLD Datasheet

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1N5395GSC1: DescriptionRectifier Diode, 1 Phase, 1 Element, 1.5A, 400V V(RRM), Silicon, DO-204AL, DO-41, 2 PIN; CategoryDiscrete semiconductor diode; File Size473KB，4 Pages; ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.; Websitehttp://www.21yangjie.com/; Environmental Compliance; Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.

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1N5395GSC1 Overview

Rectifier Diode, 1 Phase, 1 Element, 1.5A, 400V V(RRM), Silicon, DO-204AL, DO-41, 2 PIN

1N5395GSC1 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Yangzhou Yangjie Electronic Technology Co., Ltd.
package instruction	O-PALF-W2
Reach Compliance Code	compliant
Other features	HIGH RELIABILITY, LOW POWER LOSS
application	EFFICIENCY
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V
JEDEC-95 code	DO-204AL
JESD-30 code	O-PALF-W2
Maximum non-repetitive peak forward current	50 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	1.5 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum repetitive peak reverse voltage	400 V
Maximum reverse current	2.5 µA
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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1N5391GS THRU 1N5399GS

General Purpose Rectifier

Features

● High efficiency

● High current capability

● High reliability

● High surge current capability

● Low power loss

● Glass passivated chip junction

● Solder dip 275 °C max. 7 s, per JESD 22-B106

RoHS

COMPLIANT

Mechanical Data

●

Package:

DO-204AL(DO-41)

Molding compound meets UL 94 V-0 flammability rating,

RoHS-compliant

●

Terminals:

Tin plated leads, solderable per J-STD-

002 and JESD22-B102

●

Polarity:

Color band denotes cathode end

■Maximum Ratings

(Ta=25℃ Unless otherwise specified）

PARAMETER

SYMBOL

UNIT

1N5391G

RRM

F(AV)

1N5392G

100

1N5393G

200

1N5395G

400

1.5

1N5397G

600

1N5398G

800

1N5399G

1000

Device marking code

Repetitive Peak Reverse Voltage

Average Forward Current

@60Hz sine wave, Resistance load, Ta =75℃

Forward Surge Current (Non-repetitive)

@60Hz Half-sine wave,1 cycle, Ta=25℃

Storage Temperature

Junction Temperature

FSM

Tstg

℃

-55 ~+150

-55~+150

■Electrical

Characteristics

（T

=25℃ Unless otherwise specified）

PARAMETER

Maximum instantaneous

forward voltage drop per diode

Maximum DC reverse current

at rated DC blocking voltage

per diode

SYMBOL

UNIT

TEST CONDITIONS

1N5391G 1N5392G 1N5393G 1N5395G 1N5397G 1N5398G 1N5399G

1.1

2.5

RRM1

=1.5A

Ta=25℃

μA

RRM2

Ta=100℃

Measured at 1MHZ

and Applied Reverse

Voltage of 4.0 V.D.C.

Typical junction capacitance

■

Thermal Characteristics

（T

=25℃ Unless otherwise specified）

PARAMETER

Thermal Resistance(Typical)

SYMBOL

θJ-A

UNIT

℃/W

1N5391GS

1N5392GS

1N5393GS

1N5395GS

1N5397GS

1N5398GS

1N5399GS

1/4

S-A493

Rev.2.1, 02-Feb-16

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

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