1N5261B datasheet, PDF - EEWORLD Datasheet

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1N5261B: DescriptionZener diode; CategoryDiscrete semiconductor diode; File Size39KB，2 Pages; ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.; Websitehttp://www.21yangjie.com/; Environmental Compliance; Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.

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1N5261B Overview

Zener diode

Features

Product Name: Zener diode

Product model: 1N5261B

product features:

Ptot 500mW

Vz 2.4V-75V

Product Usage:

Stabilizing Voltage

product data:

Zener voltage range Vz at Izt Rated Zener voltage: 47V

Test current Izt Test current: 2.7mA

Dynamic resistance Maximum dynamic resistance:

Zzt at Izt： 105Ω

Zzk at Izk =0.25mA: 1000Ω

Temperature of Coefficient at Izt Temperature coefficient: 0.095%/K

Reverse leakage current Maximum reverse leakage current: IR: 0.1μA VR=36V

Maximum junction temperature Tj: 175℃

Storage temperature range Tstg: -65~+175℃

Package: DO-35

1N5261B Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Yangzhou Yangjie Electronic Technology Co., Ltd.
Reach Compliance Code	compli
Configuration	SINGLE
Diode type	ZENER DIODE
Maximum dynamic impedance	105 Ω
Number of components	1
Maximum operating temperature	175 °C
Maximum power dissipation	0.5 W
Nominal reference voltage	47 V
surface mount	NO
Working test current	2.7 mA

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1N5221B~1N5267B

Zener diode

Features

1.High reliability

2.Very sharp reverse characteristic

3.Low reverse current level

4.Vz-tolerance

Voltage Range

2.4 to 75 Volts

DO-35

1.02(26.0)

MIN

.079(2.0)

MAX

.165(4.2)

MAX

Applications

Voltage stabilization

1.02(26.0)

MIN

Absoluto Maximum Ratings

Tj=25 C

Parameter

Power dissipation

Z-current

Junction temperature

Storage temperature range

Test Conditions

amb

*75

Type

.020(.52)

TYP

Dimensions in inches and (millimeters)

Symbol

Tstg

Value

500

200

-65~+200

Unit

Maximum Thermal Resistance

Tj=25

Parameter

Junction ambient

Test Condltions

I=9.5mm(3/8") T

=constant

Symbol

thJA

Value

300

Unit

K/W

Electrcal Characteristics

Tj=25

Parameter

Forward voltage

Test Conditions

=200mA

Type

Symbol

Min

Typ

Max

1.1

Unit

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