1N4760A datasheet, PDF - EEWORLD Datasheet

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1N4760A: DescriptionZener diode; CategoryDiscrete semiconductor diode; File Size147KB，3 Pages; ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.; Websitehttp://www.21yangjie.com/; Environmental Compliance; Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.

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1N4760A Overview

Zener diode

68 V, 1 W, 硅, 单向电压稳压二极管, DO-41

Features

Product Name: Zener diode

Product model: 1N4760A

product features:

Ptot 1.0W

Vz 3.3V-100V

Product Usage:

Stabilizing Voltage

product data:

Zener voltage range Vz at Izt Rated Zener voltage: 68V

Test current Izt Test current: 3.7mA

Dynamic resistance Maximum dynamic resistance:

Rzjt at Izt: 150Ω

Rzjk at Izk：2000Ω

Izk: 0.25mA

Reverse leakage current Maximum reverse leakage current: IR: 5μA

Test voltage Vr ：51.7V

Surge current (at Ta=25℃) IR surge current: 65mA

Maximum regulator current Izm Maximum adjustment current: 13mA

Maximum junction temperature Tj: 175℃

Storage temperature range Tstg: -65~+175℃

Package: DO-41

1N4760A Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Yangzhou Yangjie Electronic Technology Co., Ltd.
package instruction	O-XALF-W2
Reach Compliance Code	compli
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	ZENER DIODE
Maximum dynamic impedance	150 Ω
JEDEC-95 code	DO-41
JESD-30 code	O-XALF-W2
JESD-609 code	e3
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Package body material	UNSPECIFIED
Package shape	ROUND
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
polarity	UNIDIRECTIONAL
Maximum power dissipation	1 W
Nominal reference voltage	68 V
surface mount	NO
technology	ZENER
Terminal surface	Tin (Sn)
Terminal form	WIRE
Terminal location	AXIAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Maximum voltage tolerance	5%
Working test current	3.7 mA

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1N47 SERIES

稳压（½纳）二极管

Zener Diodes

■特征

Features

●

tot

1.0W

●

3.3V-100V

■外½尺寸和印记

Outline Dimensions and Mark

DO-41

1.02(26.0)

MIN

.177(4.50)

MAX

1.02(26.0)

MIN

.034(0.86)

MAX

■用途 Applications

●稳定电压用 Stabilizing

Voltage

.102(2.60)

MAX

Dimensions in inches and (millimeters)

■极限值（绝对最大额定值）

Limiting Values (Absolute Maximum Rating)

参数名称

Item

损耗功率

Power dissipation

½纳电流

Zener current

最大结温

Maximum junction temperature

存储温度范围

Storage temperature range

符号

Symbol

tot

单½

Unit

℃

条件

Conditions

L=4mm,T

=25℃

最大值

Max

1.0

175

stg

℃

-65 to +175

■电特性（T

a=25

℃

除非另有规定）

Electrical Characteristics（Ta=25

℃

Unless otherwise specified）

参数名称

Item

典型热阻(1)

Thermal resistance

正向电压

Forward voltage

符号

Symbol

θJA

单½

Unit

℃/W

条件

Conditions

结到环境，L=4毫米，T

=常温

junction to ambient air, L=4mm,T

=constant

=200mA

最大值

Max

110

1.2

备注：Notes:

距离管½4毫米引线处的温度设定为环境温度

Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature.

Document Number 0244

Rev. 1.0, 22-Sep-11

扬州扬杰电子科技股½有限公司

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

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