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1N4150-35B

Description
Rectifier Diode, 1 Element, 0.2A, 50V V(RRM), Silicon, DO-35, ROHS COMPLIANT, GLASS, MINIMELF-2
CategoryDiscrete semiconductor    diode   
File Size57KB,2 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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1N4150-35B Overview

Rectifier Diode, 1 Element, 0.2A, 50V V(RRM), Silicon, DO-35, ROHS COMPLIANT, GLASS, MINIMELF-2

1N4150-35B Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeDO-35
package instructionROHS COMPLIANT, GLASS, MINIMELF-2
Contacts2
Reach Compliance Code_compli
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-35
JESD-30 codeO-LALF-W2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current0.2 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.5 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage50 V
Maximum reverse recovery time0.004 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1

1N4150-35B Preview

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1N4150
FAST SWITCHING SURFACE MOUNT DIODES
VOLTAGE
50 Volts
POWER
500 mWatts
FEATURES
• Fast switching Speed.
• Surface Mount Package Ideally Suited For Automatic Insertion.
• Silicon Epitaxal Planar Construction.
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case: Mini Melf, Glass
• Terminals: Solderable per MIL-STD-750, Method 2026
• Polarity: See Diagram Below
• Approx. Weight: 0.13 grams
• Mounting Position: Any
• Ordering information: Suffix : “ -35 ” to order DO-35 Package
• Packing information
B
- 2K per Bulk box
T/R - 10K per 15" plastic Reel
T/B - 5K per horiz. tape & Ammo box
3.0
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
J
=25°C unless otherwise noted)
PARAMETER
Reverse Voltage
Peak Reverse Voltage
RMS Voltage
Maximum Average Forward Current at T
A
=25
O
C And f > 50Hz
Surge Forward Current at t < 1s and T
J
=25
Power Dissipation at Tamb= 25
O
O
SYMBOL
V
R
V
R M
V
R M S
I
F (A V )
I
F S M
P
T O T
V
F
I
R
C
J
t
rr
R
θ
J A
T
J
,T
S
1N4150
50
50
35
200
500
500
1.0
0.1
4
4
350
-65 to +175
UNITS
V
V
V
mA
mA
mW
V
µA
pF
ns
O
C
C
Maximum Forward Voltage at I
F
=200mA
Maximum Leakage Current at V
R
= 50V
Maximum Capacitance (Note 1)
Maximum Reverse Recovery Time (Note 2)
Typcal Thermal Resistance
Junction Temperature and Storage Temperature Range
C/W
O
C
NOTE:
1. CJ at V
R
=0, f=1MHZ
2. From I
F
=10mA to I
R
=1mA, V
R
=6Volts, R
L
=100Ω
STAD-FEB.06.2009
PAGE . 1
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