1N4003G datasheet, PDF - EEWORLD Datasheet

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1N4003G: Description1.0A SILICON RECTIFIERS 1.0A silicon rectifier; CategoryDiscrete semiconductor; File Size123KB，2 Pages; ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.; Websitehttp://www.21yangjie.com/; Environmental Compliance; Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.

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1N4003G Overview

1.0A SILICON RECTIFIERS 1.0A silicon rectifier

Features

Product Name: 1.0A SILICON RECTIFIERS 1.0 ampere silicon rectifier

Product model: 1N4003G

product features:

Low forward voltage drop

High current capability

High reliability

High surge current capability

Mechanical data:

Cases:Molded plastic

Epoxy:UL 94V-0 rate flame retardant

Lead:Axial leads,solderable per MIL-STD-202, Method 208 guaranteed

Polarity:Color band denotes cathode end

High temperature soldering guaranteed;

250?C /10 seconds/.375”,(9.5mm)lead

Lengths at 5 lbs.,(2.3kg) tension

Weight: 0.34 grams

Maximum Ratings and Electrical Characteristics:

Rating at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

product data:

Maximum Repetitive Peak Reverse Voltage VRRM Maximum reverse peak voltage: 200V

Maximum RMS Voltage VRMS Voltage effective value: 140V

Maximum DC blocking Voltage VDC Maximum DC blocking voltage: 200V

Maximum Average Forward Rectified Current .375”(9.5mm) Lead length @TA=75℃ IF(AV) Maximum forward current: 1.0 A

Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Super imposed on Rated Load IFSM Maximum forward surge current: 30 A

Maximum Instantaneous Forward Voltage @ 1.0A VF Maximum forward voltage drop: 1.0 V

Maximum Reverse Current at Rated @TA=25℃ IR Maximum reverse leakage current: 5.0μA

DC blocking voltage @TA= 100℃ IR Maximum reverse leakage current: 100.0μA

Typical Thermal Resistance (Note) RθJA Thermal resistance coefficient: 65 ℃/W

Operating Temperature Range TJ Operating Junction Temperature: -65 to +150 ℃

Storage Temperature Range TSTG Storage Temperature Range: -65 to +150 ℃

Package: DO-41

1N4003G Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Yangzhou Yangjie Electronic Technology Co., Ltd.
package instruction	O-PALF-W2
Reach Compliance Code	compliant
Other features	HIGH RELIABILITY; LOW POWER LOSS
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V
JEDEC-95 code	DO-204AL
JESD-30 code	O-PALF-W2
Maximum non-repetitive peak forward current	30 A
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	1 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum repetitive peak reverse voltage	200 V
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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1N4001G THRU 1N4007G

硅整流二极管

General Purpose Rectifier

■

特征

Features

■

外½尺寸和印记

Outline Dimensions and Mark

DO-204AL(DO-41 )

.205(5.21)

.166(4.22)

1.0(25.4)

MIN

1.0(25.4)

MIN

●

1.0A

●

VRRM

50V-1000V

●

耐正向浪涌电流½力高

●High

surge current capability

●整流用

Rectifier

.080(2.03)

.028(0.71)

Unit: in inches (millimeters)

■

极限值（绝对最大额定值）

Limiting Values (Absolute Maximum Rating)

参数名称

Item

反向重复峰值电压

Repetitive Peak Reverse Voltage

正向平均电流

Average Forward Current

正向（不重复）浪涌电流

Surge(Non-repetitive)Forward

Current

结温

Junction Temperature

储存温度

Storage Temperature

符号

Symbol

RRM

F(AV)

FSM

STG

单½

Unit

条件

Conditions

1N40

01G 02G 03G 04G 05G 06G 07G

100

200

400

600

800

1000

℃

正弦半波60Hz，

电阻负½½，

Ta=75℃

60Hz Half-sine wave, Resistance

load, Ta=75℃

正弦半波60Hz，

一个周期，

Ta=25℃

60Hz Half-sine wave,1 cycle,

Ta=25℃

1.0

-55~+150

-55 ~ +150

■

电特性

（Ta=25℃ 除非另有规定）

Electrical Characteristics (Ta=25℃ Unless otherwise specified）

参数名称

Item

符号

Symbol

RRM1

RRM2

J-A

℃

J-L

单½

Unit

μA

测试条件

Test Condition

=1.0A

RRM

Ta=25℃

Ta=125℃

最大值

Max

1.1

正向峰值电压

Peak Forward Voltage

反向峰值电流

Peak Reverse Current

热阻(典型)

Thermal

Resistance(Typical)

结和环境之间

Between junction and ambient

结和引线之间

Between junction and lead

Document Number 0094

Rev. 1.0, 22-Sep-11

扬州扬杰电子科技股½有限公司

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

DIA

■

用途

Applications

.107(2.72)

.034(0.86)

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