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1F7G

Description
1 A, 1000 V, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size45KB,2 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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1F7G Overview

1 A, 1000 V, SILICON, SIGNAL DIODE

1F7G Parametric

Parameter NameAttribute value
MakerPANJIT
Reach Compliance Codecompli
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.3 V
Maximum non-repetitive peak forward current30 A
Number of components1
Maximum operating temperature150 °C
Maximum output current1 A
Maximum repetitive peak reverse voltage1000 V
Maximum reverse recovery time0.5 µs
surface mountNO

1F7G Preview

Download Datasheet
DATA SHEET
1F1G~1F5G
GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIERS
VOLTAGE
FEATURES
• High current capability.
.787(20.0)MIN.
50 to 600 Volts
CURRENT
1.0 Amperes
R-1
Unit: inch(mm)
• Plastic package has Underwriters Laboratories
Flammability Classification 94V-O utilizing
Flame Retardant Epoxy Molding Compound.
• Low leakage.
• Fast switching for high efficiency.
• Exceeds environmental standards of MIL-S-19500/228
.138(3.5)
.114(2.9)
.025(.64)
.021(.53)
• In compliance with EU RoHS 2002/95/EC directives
MECHANICALDATA
• Case: Molded plastic, R-1
• Terminals: Axial leads, solderable per MIL-STD-750,Method 2026
• Polarity: Band denotes cathode
• Mounting Position: Any
• Weight: 0.0064 ounce, 0.181 gram
.787(20.0)MIN.
.102(2.6)
.087(2.2)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Resistive or inductive load, 60Hz.
PA RA M E TE R
M a xi m um R e c ur r e nt P e a k R e ve r s e V o l t a g e
M a xi m um R M S V o l t a g e
M a xi m um D C B l o c k i ng V o l t a g e
M a xi m um A ve r a g e F o r w a r d C ur r e nt . 3 7 5 " ( 9 . 5 m m )
l e a d l e ng t h a t T
A
= 5 5
O
C
P e a k F o r w a r d S ur g e C ur r e nt : 8 . 3 m s s i ng l e ha l f s i ne -
w a ve s up e r i m p o s e d o n r a t e d l o a d ( J E D E C m e t ho d )
M a xi m um F o r w a r d V o l t a g e a t 1 . 0 A
M a xi m um D C R e ve r s e C ur r e nt T
J
= 2 5
O
C
a t R a t e d D C B l o c k i ng V o l t a g e T
J
= 1 0 0
O
C
Ty p i c a l J u n c t i o n c a p a c i t a n c e ( N o t e 1 )
M a x i m u m R e v e r s e R e c o v e r y Ti m e
Ty p i c a l T h e r m a l R e s i s t a n c e
O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e
S YM B O L 1 F 1 G 1 F 2 G
V
RRM
V
RMS
V
DC
I
F ( A V )
I
F S M
V
F
I
R
C
J
t
rr
R
θ
J A
T
J
, T
S TG
50
35
50
100
70
100
1F3G
200
140
200
1 .0
30
1 .3
5 .0
150
12
1F4G
400
280
400
1F5G
600
420
600
U N IT S
V
V
V
A
A
V
uA
pF
150
67
- 5 5 TO + 1 5 0
250
O
ns
C / W
O
C
NOTES:1. Reverse Recovery Test Conditions: I
F
=.5A, I
R
=1A, I
rr
=.25A
2. Measured at 1 MHz and applied reverse voltage of 4.0 VDC
3. Thermal resistance from junction to ambient and from junction to lead length 0.375"(9.5mm) P.C.B. mounted
with 0.22 x 0.22” ( 5.5 x 5.5mm ) copper pads.
STAD-FEB.09.2007
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