1F2G_R2_10001 datasheet, PDF - EEWORLD Datasheet

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1F2G_R2_10001: DescriptionRectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon,; CategoryDiscrete semiconductor diode; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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1F2G_R2_10001 Overview

Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon,

1F2G_R2_10001 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	PANJIT
package instruction	O-PALF-W2
Reach Compliance Code	compliant
ECCN code	EAR99
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.3 V
JESD-30 code	O-PALF-W2
Maximum non-repetitive peak forward current	30 A
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	1 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum repetitive peak reverse voltage	100 V
Maximum reverse recovery time	0.15 µs
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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1F1G~1F5G

GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIERS

VOLTAGE

FEATURES

• High current capability.

.787(20.0)MIN.

50 to 600 Volts

CURRENT

1.0 Amperes

R-1

Unit: inch(mm)

• Plastic package has Underwriters Laboratories

Flammability Classification 94V-O utilizing

Flame Retardant Epoxy Molding Compound.

• Low leakage.

• Fast switching for high efficiency.

• Exceeds environmental standards of MIL-S-19500/228

.138(3.5)

.025(.64)

.021(.53)

•

Lead free in comply with EU RoHS 2011/65/EU directives

MECHANICALDATA

• Case: Molded plastic, R-1

• Terminals: Axial leads, solderable per MIL-STD-750,Method 2026

• Polarity: Band denotes cathode

• Mounting Position: Any

• Weight: 0.0068 ounce, 0.1937 gram

.787(20.0)MIN.

.114(2.9)

.102(2.6)

.087(2.2)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified. Resistive or inductive load, 60Hz.

PA RA M E TE R

M a xi m um R e c ur r e nt P e a k R e ve r s e V o l t a g e

M a xi m um R M S V o l t a g e

M a xi m um D C B l o c k i ng V o l t a g e

M a xi m um A ve r a g e F o r w a r d C ur r e nt . 3 7 5 " ( 9 . 5 m m )

l e a d l e ng t h a t T

= 5 5

P e a k F o r w a r d S ur g e C ur r e nt : 8 . 3 m s s i ng l e ha l f s i ne - w a ve

s up e r i m p o s e d o n r a t e d l o a d ( J E D E C m e t ho d )

M a xi m um F o r w a r d V o l t a g e a t 1 . 0 A

M a xi m um D C R e ve r s e C ur r e nt T

= 2 5

a t R a t e d D C B l o c k i ng Vo l t a g e T

= 1 0 0

Ty p i c a l J u n c t i o n c a p a c i t a n c e ( N o t e 1 )

M a x i m u m R e v e r s e R e c o v e r y Ti m e

Ty p i c a l T h e r m a l R e s i s t a n c e

O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e

S YM B O L

RRM

RMS

D C

F ( A V )

F S M

J A

, T

S T G

1F1G

1F2G

100

1F3G

200

140

200

1 .0

1 .3

1 .0

150

1F4G

400

280

400

1F5G

600

420

600

U N IT S

150

-5 5 to +1 5 0

250

C / W

NOTES:1. Reverse Recovery Test Conditions: I

=.5A, I

=1A, I

=.25A

2. Measured at 1 MHz and applied reverse voltage of 4.0 VDC

3. Thermal resistance from junction to ambient and from junction to lead length 0.375"(9.5mm) P.C.B. mounted

with 0.22 x 0.22” ( 5.5 x 5.5mm ) copper pads.

STAD-MAR.03.2009

PAGE . 1

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