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1E1_09

Description
1 A, 300 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size41KB,2 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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1E1_09 Overview

1 A, 300 V, SILICON, SIGNAL DIODE

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1E1 ~ 1E6
SUPERFAST RECOVERY RECTIFIERS
VOLTAGE
FEATURES
• Plastic package has Underwriters Laboratories
Flammability Classification 94V-O utilizing
Flame Retardant Epoxy Molding Compound.
• Superfast recovery times-epitaxial construction.
• Low forward voltage, high current capability.
• Exceeds environmental standards of MIL-S-19500/228.
• Hermetically sealed.
.138(3.5)
50 to 800 Volts
CURRENT
1.0 Ampere
R-1
Unit: inch(mm)
.787(20.0)MIN.
.025(.64)
.021(.53)
• Low leakage.
• High surge capability.
• In compliance with EU RoHS 2002/95/EC directives
.787(20.0)MIN.
.114(2.9)
MECHANICALDATA
• Case: Molded plastic, R-1.
• Terminals: Axial leads, solderable to MIL-STD-750, Method 2026
• Polarity: Color Band denotes cathode end.
• Mounting Position: Any
• Weight: 0.0068 ounce, 0.1937 gram
.102(2.6)
.087(2.2)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Resistive or inductive load, 60Hz.
PA RA M E TE R
M a xi m um R e c ur r e nt P e a k R e ve r s e V o l t a g e
M a xi m um R M S V o l t a g e
M a xi m um D C B l o c k i ng V o l t a g e
M a xi m um A ve r a g e F o r w a r d C ur r e nt . 3 7 5 " ( 9 . 5 m m )
l e a d l e ng t h a t T
A
= 5 5
O
C
P e a k F o r w a r d S ur g e C ur r e nt : 8 . 3 m s s i ng l e ha l f s i ne - w a ve
s up e r i m p o s e d o n r a t e d l o a d ( J E D E C m e t ho d )
M a xi m um F o r w a r d V o l t a g e a t 1 . 0 A
M a xi m um D C R e ve r s e C ur r e nt T
J
= 2 5
O
C
a t R a t e d D C B l o c k i ng Vo l t a g e T
J
= 1 0 0
O
C
Ty p i c a l J u n c t i o n c a p a c i t a n c e ( N o t e 2 )
M a x i m u m R e v e r s e R e c o v e r y Ti m e ( N o t e 1 )
Ty p i c a l T h e r m a l R e s i s t a n c e
O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e
S YM B O L 1 E 1
V
RRM
V
RMS
V
D C
I
F ( A V )
I
F S M
V
F
I
R
C
J
t
rr
R
θ
J A
T
J
, T
S T G
50
35
50
1E2 1E2A 1E3 1E3A 1E4
100
70
100
150
105
150
200
140
200
300
210
300
400
280
400
1E5
600
420
600
1E6
800
560
800
U N IT S
V
V
V
A
A
1 .0
30
0 .9 5
1 .0
150
17
35
60
-5 5 to +1 5 0
O
1 .2 5
1 .7
V
µ
A
pF
ns
C / W
O
C
NOTES:
1. Reverse Recovery Test Conditions: I
F
=.5A, I
R
=1A, Irr=.25A
2. Measured at 1 MHz and applied reverse voltage of 4.0 VDC
STAD-MAR.06.2009
PAGE . 1
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