TN3015H-6G
Datasheet
High temperature 30 A, 600 V D
2
PAK thyristor SCRs
A
Features
•
High junction temperature: T
j
= 150 °C
High noise immunity dV/dt = 1000 V/µs up to 150 °C
Gate triggering current I
GT
= 15 mA
Peak off-state voltage V
DRM
/V
RRM
= 600 V
High turn-on current rise dI/dt = 100 A/µs
ECOPACK2
compliant
•
•
G
K
•
A
•
•
A
K
G
Applications
•
•
•
•
•
•
General purpose AC line load switching
Motorbike voltage regulator circuits
Inrush current limiting circuits
Motor control circuits and starters
Heating resistor control, Solid State Relays
Lighting
D²PAK
Description
Thanks to its operating junction temperature up to 150°C, the
TN3015H-6G
SCR in
D
2
PAK package offers high thermal performance operation up to 30 A RMS in a
compact SMD design.
Product status
TN3015H-6G
Product summary
Order code
Package
V
DRM
/V
RRM
T
j
I
GT
TN3015H-6G
D
2
PAK
600 V
150 °C
15 mA
Its trade-off noise immunity (dV/dt = 1000 V/μs) versus its gate triggering current
(I
GT
= 15 mA) and its turn-on current rise (dI/dt = 100 A/μs) allows to design robust
and compact control circuit for voltage regulator in motorbikes and industrial drives,
overvoltage crowbar protection, motor control circuits in power tools and kitchen
appliances and inrush current limiting circuits.
DS13026
-
Rev 1
-
July 2019
For further information contact your local STMicroelectronics sales office.
www.st.com
TN3015H-6G
Characteristics
1
Characteristics
Table 1.
Absolute maximum ratings (limiting values)
Symbol
I
T(RMS)
Parameter
RMS on-state current (180 ° conduction angle)
T
c
= 127 °C
T
c
= 127 °C
I
T(AV)
Average on-state current (180 ° conduction angle)
T
c
= 134 °C
T
c
= 141 °C
I
TSM
I
2
t
dl/dt
V
DRM
/V
RRM
V
DSM
/V
RSM
I
GM
P
G(AV)
V
RGM
T
stg
T
j
Non repetitive surge peak on-state current (T
j
initial = 25 °C)
I
2
t value for fusing (T
j
initial = 25 °C)
I
G
= 2 x I
GT
, tr ≤ 100 ns
Critical rate of rise of on-state current
Repetitive peak off-state voltage
Non repetitive surge peak off-state voltage
Peak gate current
Average gate power dissipation
Maximum peak reverse gate voltage
Storage junction temperature range
Maximum operating junction temperature
t
p
= 10 ms
t
p
= 20 µs
T
j
= 25 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 25 °C
f = 60 Hz
t
p
= 8.3 ms
t
p
= 10 ms
t
p
= 10 ms
T
j
= 25 °C
Value
30
19
15
10
295
270
364
100
600
V
DRM
/V
RRM
+100
4
1
5
-40 to +150
-40 to +150
A
A
2
s
A/µs
V
V
A
W
V
°C
°C
A
Unit
A
Table 2.
Electrical characteristics (T
j
= 25 °C unless otherwise specified)
Symbol
I
GT
V
GT
V
GD
I
H
I
L
dV/dt
t
gt
t
q
V
D
= V
DRM
, R
L
= 3.3 kΩ
I
T
= 500 mA, gate open
I
G
= 1.2 x I
GT
V
D
= 402 V, gate open
I
T
= 60 A, V
D
= 600 V, I
G
= 100 mA, (dI
G
/dt) max = 0.2 A/µs
I
T
= 30 A, V
D
= 402 V,(di/dt)off = 30 A/µs, V
R
= 25 V, dV
D
/dt = 50 V/µs
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
Test conditions
Min.
V
D
= 12 V, R
L
= 33 Ω
Max.
Max.
Min.
Max.
Max.
Min.
Typ.
Typ.
Value
6
15
1.3
0.15
60
75
1000
1.9
80
Unit
mA
V
V
mA
mA
V/µs
µs
µs
DS13026
-
Rev 1
page 2/11
TN3015H-6G
Characteristics
Table 3.
Static characteristics
Symbol
V
TM
V
TO
R
D
I
DRM
,
I
RRM
I
TM
= 60 A, t
p
= 380 µs
Threshold voltage
Dynamic resistance
V
D
= V
DRM
, V
R
= V
RRM
Test conditions
T
j
= 25 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
Max.
Max.
Max.
Max.
Value
1.6
0.84
14
10
5
Unit
V
mΩ
µA
mA
Table 4.
Thermal parameters
Symbol
R
th(j-c)
R
th(j-a)
Junction to case (DC)
Junction to ambient
(1)
S(1) = 1 cm
2
Parameter
Max.
Typ.
Value
0.85
45
Unit
°C/W
1. S : Copper pad under tab, on PCB FR4
DS13026
-
Rev 1
page 3/11
TN3015H-6G
Characteristics (curves)
1.1
Characteristics curves
Figure 2.
Average and DC on-state current versus case
temperature
35
30
25
20
Figure 1.
Maximum power dissipation versus average on-
state current
30
25
20
15
P(W)
α = 180 °
α = 120 °
α = 90 °
α = 60 °
α = 30 °
DC
IT
(AV)
(A)
DC
α = 180 °
α = 120 °
α = 90 °
α = 60 °
α = 30 °
T
c
(°C)
0
25
50
75
100
125
150
15
10
360 °
10
5
α
5
IT
(AV)
(A)
15
20
25
0
0
0
5
10
Figure 3.
Average and D.C. on state current versus
ambient temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
25
50
Figure 4.
On-state characteristics (maximum values)
1000
I
T(AV)
(A)
I
TM
(A)
DC
100
α = 180 °
Tj max:
V
t0
= 0.84 V
R
d
= 14 mΩ
10
Tj = 150 °C
T
a
(°C)
75
100
125
150
Tj = 25 °C
1.0
1.5
2.0
2.5
3.0
3.5
V
TM
(V)
4.0
4.5
1
0.0
0.5
Figure 5.
Relative variation of thermal impedance junction
to case and junction to ambient versus pulse duration
1,0E+00
Figure 6.
Relative variation of gate trigger current and
gate voltage versus junction temperature (typical values)
2.5
K = [Zth/ Rth]
Zth(j-c)
I
GT
, V
GT
[ Tj ] / I
GT
, V
GT
[ Tj = 25 °C]
2.0
I
GT
1,0E-01
Zth(j-a)
S = 1 cm²
1.5
1.0
1,0E-02
V
GT
0.5
t
P
(s)
1,0E-03
1,0E-03
1,0E-02
1,0E-01
1,0E+00
1,0E+01
1,0E+02
1,0E+03
T
j
(°C)
0.0
-50
-25
0
25
50
75
100
125
150
DS13026
-
Rev 1
page 4/11
TN3015H-6G
Characteristics (curves)
Figure 7.
Relative variation of holding and latching
current versus junction temperature (typical values)
2.5
2.3
2.0
1.8
1.5
1.3
1.0
0.8
0.5
0.3
0.0
-50
-25
0
25
I
L
I
H
Figure 8.
Relative variation of static dV/dt immunity
versus junction temperature (typical values)
5
IH, IL [ Tj ] / IH, IL [ Tj = 25 °C]
dV/dt [Tj] / dV/dt [Tj= 150 °C]
V
D
= 402 V
4
3
2
1
T
j
(°C)
50
75
100
125
150
T
j
(°C)
0
25
50
75
100
125
150
Figure 9.
Surge peak on-state current versus number of
cycles
300
Figure 10.
Non repetitive surge peak on-state current for a
sinusoidal pulse with width t
p
< 10 ms
10000
I
TSM
(A)
Non repetitive Tj = 25 °C
t
p
=10ms
One cycle
I
TSM
(A)
dl/dt limitation: 100 A/µs
Tj initial = 25 °C
I
TSM
200
1000
100
Repetitive Tc = 127°C
100
Number of cycles
0
1
10
100
1000
10
0.01
tp(ms)
0.10
1.00
10.00
Figure 11.
Relative variation of leakage current versus
junction temperature
1.0E+00
Figure 12.
Thermal resistance junction to ambient versus
copper surface under tab
80
70
R
th(j-a)
(°C/W)
D²PAK
IDRM, IRRM [ Tj ; VDRM, VRRM ] / IDRM , IRRM [ 150 °C; 600 V ]
Epoxy printed board FR4, copper thickness = 35 µm
1.0E-01
VDRM = VRRM = 600 V
60
50
1.0E-02
40
1.0E-03
30
20
1.0E-04
Tj(°C)
1.0E-05
25
10
0
150
S
Cu
(cm²)
0
5
10
15
20
25
30
35
40
50
75
100
125
DS13026
-
Rev 1
page 5/11
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