Part Number |
Manufacturer |
Description |
Datasheet |
DS2502R+T&R; |
Maxim |
Memory Interface Type: 1-Wire Memory Capacity: 1Kb (1K x 1) Operating Voltage: - Memory Type: Non-Volatile 1kb |
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AT27C010-45JU |
Microchip |
Memory interface type: Parallel Memory capacity: 1Mb (128K x 8) Operating voltage: 4.5V ~ 5.5V Memory type: Non-Volatile EPROM - OTP memory IC 1Mb (128K x 8) Parallel connection |
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AT27C256R-70JU |
Microchip |
Memory interface type: Parallel Memory capacity: 256Kb (32K x 8) Operating voltage: 4.5V ~ 5.5V Memory type: Non-Volatile EPROM - OTP Memory IC 256Kb (32K x 8) Parallel 70ns 32-PLCC |
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AT27C4096-55JU |
Microchip |
Memory interface type: Parallel Memory capacity: 4Mb (256K x 16) Operating voltage: 4.5V ~ 5.5V Memory type: Non-Volatile EPROM - OTP memory IC 4Mb (256K x 16) parallel connection |
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AT27C4096-90PU |
Microchip |
Memory interface type: Parallel Memory capacity: 4Mb (256K x 16) Operating voltage: 4.5V ~ 5.5V Memory type: Non-Volatile EPROM - OTP memory IC 4Mb (256K x 16) parallel connection |
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AT27LV010A-70JU |
Microchip |
Memory interface type: Parallel Memory capacity: 1Mb (128K x 8) Operating voltage: 3V ~ 3.6V, 4.5V ~ 5.5V Memory type: Non-Volatile EPROM - OTP memory IC 1Mb (128K x 8) |
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AT27LV512A-90JU |
Microchip |
Memory interface type: Parallel Memory capacity: 512Kb (64K x 8) Operating voltage: 3V ~ 3.6V, 4.5V ~ 5.5V Memory type: Non-Volatile EPROM - OTP memory IC 512Kb (64K x 8) Parallel connection |
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BQ2022ADBZR |
Texas Instruments |
Memory interface type: Single Wire Memory capacity: 1Kb (256b x 4 pages) Operating voltage: 2.65V ~ 5.5V Memory type: Non-Volatile 1 k-bit serial EPROM and SDQ interface |
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NV25160DTHFT3G |
ON Semiconductor |
Electrically erasable programmable read-only memory 16KB SPI SER CMOS E EPROM |
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NV25160DWHFT3G |
ON Semiconductor |
Electrically erasable programmable read-only memory 16KB SPI SER CMOS E EPROM |
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NV25320DTHFT3G |
ON Semiconductor |
Electrically erasable programmable read-only memory 32KB SPI SER CMOS E EPROM |
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NV25320DWHFT3G |
ON Semiconductor |
Electrically erasable programmable read-only memory 32KB SPI SER CMOS E EPROM |
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NV25640DTHFT3G |
ON Semiconductor |
Electrically erasable programmable read-only memory 64KB SPI SER CMOS E EPROM |
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NV25640DWHFT3G |
ON Semiconductor |
Electrically erasable programmable read-only memory 64KB SPI SER CMOS E EPROM |
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|
5962-8606301UX |
Waferscale Integration Inc. |
UVPROM, 32KX8, 200ns, CMOS, CDIP28, CERAMIC, DIP-28 |
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|
5962-8606301YA |
e2v technologies |
UVPROM, 32KX8, 200ns, CMOS, CQCC32, CERAMIC, LCC-32 |
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5962-8606301YA |
AMD |
UVPROM, 32KX8, 200ns, CMOS, CQCC32, WINDOWED, CERAMIC, LCC-32 |
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5962-8606301YC |
e2v technologies |
UVPROM, 32KX8, 200ns, CMOS, CQCC32, CERAMIC, LCC-32 |
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5962-8606302YA |
e2v technologies |
UVPROM, 32KX8, 250ns, CMOS, CQCC32, CERAMIC, LCC-32 |
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|
5962-8606302YA |
Atmel (Microchip) |
UVPROM, 32KX8, 250ns, CMOS, CQCC32, WINDOWED, CERAMIC, LCC-32 |
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5962-8606302YA |
AMD |
UVPROM, 32KX8, 250ns, CMOS, CQCC32, WINDOWED, CERAMIC, LCC-32 |
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|
5962-8606302YA |
Micross |
UVPROM, 32KX8, 250ns, CMOS, CQCC32, 0.450 X 0.550 INCH, CERAMIC, LCC-32 |
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|
5962-8606302YC |
e2v technologies |
UVPROM, 32KX8, 250ns, CMOS, CQCC32, CERAMIC, LCC-32 |
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5962-8606302YX |
Waferscale Integration Inc. |
UVPROM, 32KX8, 250ns, CMOS, CQCC32, WINDOWED, CERAMIC, LCC-32 |
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|
5962-8606302ZA |
e2v technologies |
UVPROM, 32KX8, 250ns, CMOS, CQCC32, WINDOWED, CERAMIC, JLCC-32 |
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5962-8606302ZA |
Atmel (Microchip) |
UVPROM, 32KX8, 250ns, CMOS, CQCC32, WINDOWED, CERAMIC, JLCC-32 |
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5962-8606303YA |
e2v technologies |
UVPROM, 32KX8, 300ns, CMOS, CQCC32, CERAMIC, QCC-32 |
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5962-8606303YA |
Micross |
UVPROM, 32KX8, 300ns, CMOS, CQCC32, CERAMIC, QCC-32 |
download
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5962-8606303YX |
Waferscale Integration Inc. |
UVPROM, 32KX8, 300ns, CMOS, CQCC32, CERAMIC, QCC-32 |
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|
5962-8606303YX |
VLSI |
UVPROM, 32KX8, 300ns, CMOS, CQCC32, CERAMIC, QCC-32 |
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