Simulation Design Method for RF Low Noise Amplifier

JasonYoo

Simulation Design Method for RF Low Noise Amplifier [Copy link]

This paper discusses the method of designing the low noise amplifier (LNA) at the receiving end of the radio frequency integrated circuit (RFIC) using the HP microwave circuit simulation software EESOF/Libra. The design uses the HP gallium arsenide field effect transistor (HPATF221186). Since the stability of ATF221186 is poor, and the overall gain of the amplifier is above 33dB, the noise figure is less than 2, and the input and output standing wave coefficients are less than 2, the stability of the circuit is improved, the noise figure is reduced, and the input and output matching characteristics are better. The design process starts with the design of the equivalent lumped element circuit model, and then the planar structure is used to realize each lumped element for easy integration. After the
overall simulation of EESOF, it is shown that this method is correct and effective.