2713 views|8 replies
QWE4562009
Currently offline
|
The OP
Published on 2022-12-3 11:06
Only look at the author
This post is from Discrete Device
Latest reply
For nmos and pmos with the same process and size, pmos has a larger on-resistance, so pmos is less efficient and is not suitable for high-power applications.
Find the manuals of nmos and pmos of the same size package (even 2 MOS in one package), the same manufacturer and the same series, and compare the on-resistance.
Details
Published on 2023-12-18 11:26
| |
|
||
qwqwqw2088
Currently offline
|
2
Published on 2022-12-3 20:01
Only look at the author
This post is from Discrete Device
Comments
Can't all four MOS use N tubes?
Details
Published on 2022-12-6 16:16
| |
|
||
|
QWE4562009
Currently offline
|
This post is from Discrete Device
| |
|
||
|
zengbiao12315
Currently offline
|
4
Published on 2022-12-6 16:42
Only look at the author
This post is from Discrete Device
| |
|
||
|
fjdeepblue
Currently offline
|
5
Published on 2023-12-15 16:04
Only look at the author
This post is from Discrete Device
| |
|
||
|
fjdeepblue
Currently offline
|
6
Published on 2023-12-15 16:05
Only look at the author
This post is from Discrete Device
Comments
Why can't PMOS be used when high voltage is applied?
Details
Published on 2023-12-15 16:36
| |
|
||
|
QWE4562009
Currently offline
|
This post is from Discrete Device
Comments
At high voltage, PMOS cannot be driven directly by transistors because the power consumption of the transistors responsible for level shifting is too high. Therefore, at high voltage, the driving circuit of PMOS is basically the same as that of NMOS, and using NMOS has more advantages.
Details
Published on 2023-12-16 07:55
| |
|
||
|
fjdeepblue
Currently offline
|
8
Published on 2023-12-16 07:55
Only look at the author
This post is from Discrete Device
| |
|
||
|
9
Published on 2023-12-18 11:26
Only look at the author
This post is from Discrete Device
| ||
|
||
|
EEWorld Datasheet Technical Support
EEWorld
subscription
account
EEWorld
service
account
Automotive
development
circle
About Us Customer Service Contact Information Datasheet Sitemap LatestNews
Room 1530, Zhongguancun MOOC Times Building, Block B, 18 Zhongguancun Street, Haidian District, Beijing 100190, China Tel:(010)82350740 Postcode:100190