This ultra-compact elastic memory chip improves SWaP and can be used in advanced missions such as communications, Earth observation, science and edge computing satellites.
Engineering samples (EM) of 8 GB DDR4 are available now. Flight samples (FM) are in development and are scheduled for release in early 2025.
On July 16, 2024, Teledyne e2v announced that its 8GB space-grade DDR4 memory has successfully passed space-grade certification and can be used as part of its space edge computing solution . This marks the completion of Teledyne e2v's DDR4 initial quality certification, including all screening work (temperature cycling, structural analysis, C-SAM/confocal scanning acoustic microscopy, pre-treatment, temperature humidity bias, etc.) and radiation testing. As the demand for compact, high-density memory surges, Teledyne e2v emphasizes that its latest memory chips are compatible with all contemporary high-end space processors. These processors include AMD/Xilinx VERSAL® ACAP, space-grade FPGA, MPSOC, Microchip RT PolarFire® and many ASICs.
Teledyne e2v
The ultra-fast, high-density 8 GB DDR4 memory is in the same form factor and pin-compatible with the smaller capacity 4GB DDR4, making it ideal for next-generation designs.
Modern satellite payloads transmit large amounts of data every minute and every hour. In addition, modern microsatellites and cubesats have significant limitations on system size and power. Generally, space missions such as Earth observation require tens of GB of storage space. Therefore, space missions place high demands on memory solutions in terms of memory bandwidth, access time, power consumption, physical size, and storage capacity.
“High-speed memory is a critical component for modern data-intensive satellites. The new 8GB device has twice the memory density of the previous 4GB device, in exactly the same size. In addition, with multiple temperature grades and device qualifications up to NASA Level 1, Teledyne e2v offers a robust, versatile, space-grade product range.”
--Thomas Guillemain, Marketing and Business Development Manager for Data Processing Products.
The new high-speed 8GB DDR4 memory supports a transfer rate of 2400 MT/s. It has a single-event latch-up (SEL) immunity specification of up to 60 MeV.cm²/mg. In addition, this device provides a total ionizing dose (TID) of 100 krad, and our SEU data is up to 60 MeV.cm²/mg. In terms of physical size, the package size of the 8GB device matches the previous 4GB version (i.e. 15mm x 20mm x 1.92mm), thereby doubling the storage density while maintaining pin compatibility.
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