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Painjie: Insist on self-developed chips and promote domestic substitution

Latest update time:2023-09-02
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The "2023 Hard Core Core" selection event hosted by Core Master is in full swing. China's core products and companies are now displayed in a "cloud exhibition" for you.

We sincerely invite you to cast your valuable vote for the progress of China Chip!


Scan the QR code to see more core companies



Pinejie Semiconductor (Hangzhou) Co., Ltd.




Participation Awards

Power Devices of the Year 2023

Outstanding Power Semiconductor Company in 2023



Company Introduction



Founded in September 2018, Painjie Semiconductor is a leading brand of third-generation semiconductor power devices in China, mainly engaged in power device products such as silicon carbide MOSFET, silicon carbide SBD and gallium nitride HEMT. The company has the most comprehensive silicon carbide power device product catalog in China. Silicon carbide MOSFET and silicon carbide SBD products cover various voltage levels and current carrying capabilities, and have all passed AEC-Q101 automotive grade testing and certification. It can meet various application scenarios of customers and provide customers with stable and reliable automotive-grade silicon carbide power device products.


PJ Semiconductor has a profound technical background and comprehensive industrial chain advantages. The founder, Dr. Huang Xing, has been deeply involved in the design and development of silicon carbide and gallium nitride power devices since 2009. He studied under the tutelage of Professor B. Jayant Baliga, the inventor of IGBT, and Professor Alex Q. Huang, inventor of ETO thyristor. At present, Panjie Semiconductor has released more than 100 different models of silicon carbide diodes, silicon carbide MOSFETs, silicon carbide power modules and GaN HEMT products on three voltage platforms: 650V, 1200V, and 1700V. Mass-produced products have been used in electric vehicles, IT It is widely used in equipment power supplies, photovoltaic inverters, energy storage systems, industrial applications and other fields. It provides continuous and stable supply to leading customers in various application fields, and its product quality and supply capabilities have been widely recognized by customers.


As a young and fast-growing domestic silicon carbide semiconductor power device company, Painjie insists on self-developed chips to promote domestic substitution and is widely recognized. In terms of orders: Penjie Semiconductor has introduced the world's leading electric vehicle manufacturers in 2021 and started supply; in 2022, it has introduced overseas TOP charging pile companies and world-class laser power companies; in 2023, it has received orders from well-known new energy car companies , and started bulk supply. In terms of award qualifications, Painjie has been recognized and supported by national, provincial and municipal governments at all levels since its establishment. It is an incubator enterprise of the Hangzhou National 'Core Fire' Innovation Base, a Hangzhou "Eagle Plan" enterprise, and a Zhejiang Provincial Science and Technology Enterprise. Small and medium-sized enterprises, as well as the first batch of Zhejiang Province's specialized and new small and medium-sized enterprises in 2023. Penjie has also received support from media friends and won the Most Investment Value Award in the "China Core Power" hosted by the China Semiconductor Investment Alliance, the 2022&2023 Hangzhou Quasi-Unicorn, and the AspenCore 2023 China IC Design TOP 10 Power Device Company.


Corporate official website

www.pnjsemi.com


product description



Product one

P3M12040K4




product description


P3M12040K4 has high withstand voltage, extremely low gate charge, small on-resistance Rds(on), HDFM value is industry average, and overall loss is lower, making the overall machine more efficient. It is widely used in industrial motor drives, photovoltaics, DC charging piles, energy storage converters, UPS and other fields.


P3M12040K4 is a 1200V, 40mohm, TO247-4 packaged silicon carbide MOSFET discrete device. Its parameters and performance are comparable to internationally renowned brand products. Among them, the key parameter HDFM value of the power device is more than 50% better than the industry average, showing excellent Overall performance.


At the same time, the Cgd/Cgd of this product has also been optimized and designed to make it have stronger anti-interference ability. In terms of device structure design, the unit cell size is designed to be smaller, the resistance is smaller, and the cost is lower. In addition, he has rich design experience in mobility, ion implantation, impact ionization, incomplete ionization, etc. Compared with domestic products, it has performance advantages, and compared with foreign products, it has cost-effective advantages. P3M12040K4 is mainly used in new energy vehicles, high-power DC charging piles, photovoltaic wind power new energy, industrial control and other fields. It has passed testing and verification in many leading automotive companies and tier 1 OBC projects and has begun mass supply.




Product 2

P3M12017K4




product description


P3M12017K4 has high withstand voltage, extremely low gate charge, small on-resistance Rds(on), HDFM value is industry average, and overall loss is lower, making the overall machine more efficient. Widely used in main drive inverters of new energy vehicles.


P3M12017K4 is a 1200V, 17mohm, TO247-4 packaged silicon carbide MOSFET discrete device. Its parameters and performance are comparable to internationally renowned brand products. Among them, the key parameter HDFM value of the power device is more than 50% better than the industry average, showing excellent Overall performance.


At the same time, the Cgd/Cgd of this product has also been optimized and designed to make it have stronger anti-interference ability. In terms of device structure design, the unit cell size is designed to be smaller, the resistance is smaller, and the cost is lower. In addition, he has rich design experience in mobility, ion implantation, impact ionization, incomplete ionization, etc. Compared with domestic products, it has performance advantages, and compared with foreign products, it has cost-effective advantages. P3M12017K4 is mainly used in new energy vehicles, high-power DC charging piles, photovoltaic wind power new energy, industrial control and other fields. Among them, it has begun testing and verification in many leading automotive companies and tier 1 main drive inverter systems.




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October 30th

Meet in Shenzhen



The 5th Hard Core Ecological Conference and 2023 Automotive Chip Technology Innovation and Application Forum will be held on October 30, 2023. Meet with you at the Shenzhen International Convention and Exhibition Center (Baoan New Hall) to directly tap into the development trend of Chinese chips under the new situation!



About Xinshiye-Hardcore core annual event


"Core Master - Hard Core Annual Event" is an innovative and influential selection event in China. It was founded in 2019 and has been successfully held for four times so far. It aims to discover and commend outstanding Chinese chip companies and enhance the competitiveness of Chinese chip companies. It has global influence and connects enterprises with partners such as electronic terminal factories, universities and institutions, and investment institutions to comprehensively support the development of China's semiconductor industry.


About Master Xin


Xinshiye is affiliated to Shenzhen Xinshiye Technology Co., Ltd. The team was established in 2015. It is the world's leading industry community and content-driven media. Based on the output of high-quality industry content, it provides objective, cutting-edge, in-depth and timely insights. At present, a media matrix for the entire semiconductor industry chain has been formed: three major WeChat public platforms: Chip Master, Today’s Chip News, and Global IoT Observation, and WeChat groups with more than 500 topics have been established.


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