Recently, Shanghai Xinyuanji Semiconductor Technology Co., Ltd. (hereinafter referred to as "Xinyuanji") announced that based on its original DPSS substrate technology (sapphire composite pattern substrate), the company has developed a high-resistance GaN (gallium nitride) material with low dislocation density, which can be used in the preparation of electronic power devices and microwave radio frequency devices. The quality of GaN epitaxial crystals developed by Xinyuanji is higher than that of GaN crystals on sapphire substrates. At the same time, combined with the company's unique chemical stripping technology, it can perfectly solve the heat dissipation problem of sapphire substrates, providing a new direction for high-end optoelectronic devices, electronic power devices, and microwave radio frequency devices.
SiC (silicon carbide) and Si (silicon)-based GaN are the main substrate materials for electronic power devices at present. SiC-based GaN epitaxial technology is relatively mature. Due to its high crystal quality and good substrate thermal conductivity, it has always dominated the high-end microwave radio frequency electronic power market. However, due to the difficulty in processing SiC substrates and their high price, the further application and development of this substrate is greatly limited. Si-based GaN epitaxial materials have good thermal conductivity, low price, large size, and device process is compatible with integrated circuit production lines. The industry mainly chooses Si-based GaN epitaxial technology as the main research and development trend, but due to its high dislocation density, which is 1-2 orders of magnitude higher than SiC, generally at the order of 10
9
, the reliability of the device is poor. With the rapid development of the LED industry, the cost of sapphire substrates is getting lower and lower, which is already lower than that of Si substrates, and the dislocation density is comparable to that of SiC. However, due to the poor thermal conductivity of sapphire substrates, sapphire-based GaN epitaxy cannot be used to make high-end optoelectronic devices, electronic power devices, and microwave radio frequency devices, so that sapphire substrates cannot become an option for industry development. Xinyuanji's technological breakthrough in this field will make sapphire substrates the main application direction of the industry, playing an important role in promoting the development of the industry.
It is reported that the low dislocation density and high-resistance GaN material developed by Xinyuanji based on DPSS substrate (GaN samples with a test thickness of 2-2.5 microns) has a half-width (FWHM) of the 002 plane rocking curve of less than 70arcsec, and a half-width (FWHM) of the 102 plane rocking curve of less than 200arcsec. The surface resistance (Rs) of the material is greater than 10
9
Ω/□. When two-dimensional electron gas is produced on this material, the sheet resistance (Rs) is less than 350 Ω/□, the surface carrier concentration (n
i
) is close to 9 *10
12
cm
－2
, and the mobility (μ) is greater than 2000cm
2 /
(V·s), which is better than the quality of GaN crystals grown on ordinary sapphire substrates and close to SiC-based GaN (as shown in Table 1).
Table 1: Comparison of XRD data and Hall data of GaN materials on different substrates
Xinyuanji was founded in 2014 by Dr. Hao Maosheng, a senior expert in the industry. Shanghai Chuangtu, Zhangjiang Science and Technology Investment, and China Micro Semiconductor have successively invested in it, and built a pilot production line in Shanghai Lingang.
After more than five years of dedicated research and development, Xinyuanji has formed a complete technical system with sapphire composite pattern substrate technology (DPSS), chemical stripping technology, and wafer-level batch transfer technology as the core. These technologies are the core technologies for manufacturing high-end optoelectronic devices and are the optimal solutions for Micro LED batch transfer. Xinyuanji's main technologies have been patented in China, the United States, Japan, Taiwan, China, etc., breaking the foreign monopoly of core technologies in this field, and its technical level is at the forefront of the world.
At present, all the processes of the 365nm high-end thin-film ultraviolet chip developed by Xinyuanji based on this technology have matured, and the customer sample certification has been completed, and it will be put into mass production in the near future. At present, more than 95% of this chip is imported. At the same time, Xinyuanji plans to focus on the research and development of more cost-effective high-end microwave radio frequency electronic power devices in about a year to break the market monopoly of international manufacturers on high-end electronic devices.
*Disclaimer: This article is originally written by the author. The content of the article is the author's personal opinion. Semiconductor Industry Observer reprints it only to convey a different point of view. It does not mean that Semiconductor Industry Observer agrees or supports this point of view. If you have any objections, please contact Semiconductor Industry Observer.
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