IXFH60N20F datasheet, PDF - EEWORLD Datasheet

IXFH60N20F: DescriptionMOSFET; Categorysemiconductor Discrete semiconductor; File Size92KB，2 Pages; ManufacturerIXYS ( Littelfuse ); Websitehttp://www.ixys.com/

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MOSFET

Parameter Name	Attribute value
Product Category	MOSFET
Manufacturer	IXYS ( Littelfuse )
RoHS	Details
Technology	Si
Mounting Style	Through Hole
Package / Case	TO-247-3
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	200 V
Id - Continuous Drain Current	60 A
Rds On - Drain-Source Resistance	38 mOhms
Vgs - Gate-Source Voltage	20 V
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Configuration	Single
Channel Mode	Enhancement
Packaging	Tube
Fall Time	7 ns
Height	21.46 mm
Length	16.26 mm
Pd - Power Dissipation	315 W
Rise Time	14 ns
Factory Pack Quantity	30
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	42 ns
Typical Turn-On Delay Time	15 ns
Width	5.3 mm
Unit Weight	0.056438 oz

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