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P6SMB82CA

Description
600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
CategoryDiscrete semiconductor    diode   
File Size58KB,2 Pages
ManufacturerCentral Semiconductor
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P6SMB82CA Overview

600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA

P6SMB82CA Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerCentral Semiconductor
package instructionSMB, 2 PIN
Contacts2
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresUL RECOGNIZED
Maximum breakdown voltage86.1 V
Minimum breakdown voltage77.9 V
Breakdown voltage nominal value82 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeR-PDSO-C2
JESD-609 codee0
Maximum non-repetitive peak reverse power dissipation600 W
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityBIDIRECTIONAL
Certification statusNot Qualified
Maximum repetitive peak reverse voltage70.1 V
surface mountYES
technologyAVALANCHE
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
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