AM27C512-250DIB datasheet, PDF

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AM27C512-250DIB: DescriptionUVPROM, 64KX8, 250ns, CMOS, CDIP28, WINDOWED, CERAMIC, DIP-28; Categorystorage storage; File Size897KB，17 Pages; ManufacturerRochester Electronics; Websitehttps://www.rocelec.com/

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AM27C512-250DIB Overview

UVPROM, 64KX8, 250ns, CMOS, CDIP28, WINDOWED, CERAMIC, DIP-28

AM27C512-250DIB Parametric

Parameter Name	Attribute value
Maker	Rochester Electronics
package instruction	DIP,
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum access time	250 ns
JESD-30 code	R-GDIP-T28
length	37.1475 mm
memory density	524288 bit
Memory IC Type	UVPROM
memory width	8
Number of functions	1
Number of terminals	28
word count	65536 words
character code	64000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	64KX8
Package body material	CERAMIC, GLASS-SEALED
encapsulated code	DIP
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Maximum seat height	5.588 mm
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
width	15.24 mm
Base Number Matches	1

AM27C512-250DIB Related Products

	AM27C512-250DIB	AM27C512-250DC	AM27C512-250DE	AM27C512-250DCB	AM27C512-250DEB	AM27C512-250DI
Description	UVPROM, 64KX8, 250ns, CMOS, CDIP28, WINDOWED, CERAMIC, DIP-28	UVPROM, 64KX8, 250ns, CMOS, CDIP28, WINDOWED, CERAMIC, DIP-28	UVPROM, 64KX8, 250ns, CMOS, CDIP28, WINDOWED, CERAMIC, DIP-28	UVPROM, 64KX8, 250ns, CMOS, CDIP28, WINDOWED, CERAMIC, DIP-28	UVPROM, 64KX8, 250ns, CMOS, CDIP28, WINDOWED, CERAMIC, DIP-28	UVPROM, 64KX8, 250ns, CMOS, CDIP28, WINDOWED, CERAMIC, DIP-28
Maker	Rochester Electronics	Rochester Electronics	Rochester Electronics	Rochester Electronics	Rochester Electronics	Rochester Electronics
package instruction	DIP,	DIP,	DIP,	DIP,	DIP,	DIP,
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum access time	250 ns	250 ns	250 ns	250 ns	250 ns	250 ns
JESD-30 code	R-GDIP-T28	R-GDIP-T28	R-GDIP-T28	R-GDIP-T28	R-GDIP-T28	R-GDIP-T28
length	37.1475 mm	37.1475 mm	37.1475 mm	37.1475 mm	37.1475 mm	37.1475 mm
memory density	524288 bit	524288 bit	524288 bit	524288 bit	524288 bit	524288 bit
Memory IC Type	UVPROM	UVPROM	UVPROM	UVPROM	UVPROM	UVPROM
memory width	8	8	8	8	8	8
Number of functions	1	1	1	1	1	1
Number of terminals	28	28	28	28	28	28
word count	65536 words	65536 words	65536 words	65536 words	65536 words	65536 words
character code	64000	64000	64000	64000	64000	64000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	85 °C	70 °C	125 °C	70 °C	125 °C	85 °C
Minimum operating temperature	-40 °C	-	-55 °C	-	-55 °C	-40 °C
organize	64KX8	64KX8	64KX8	64KX8	64KX8	64KX8
Package body material	CERAMIC, GLASS-SEALED	CERAMIC, GLASS-SEALED	CERAMIC, GLASS-SEALED	CERAMIC, GLASS-SEALED	CERAMIC, GLASS-SEALED	CERAMIC, GLASS-SEALED
encapsulated code	DIP	DIP	DIP	DIP	DIP	DIP
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Maximum seat height	5.588 mm	5.588 mm	5.588 mm	5.588 mm	5.588 mm	5.588 mm
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	NO	NO	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	INDUSTRIAL	COMMERCIAL	MILITARY	COMMERCIAL	MILITARY	INDUSTRIAL
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal pitch	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
width	15.24 mm	15.24 mm	15.24 mm	15.24 mm	15.24 mm	15.24 mm
Base Number Matches	1	1	1	1	1	1

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