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934054610135

Description
Power Field-Effect Transistor
CategoryDiscrete semiconductor    The transistor   
File Size167KB,10 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Environmental Compliance
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934054610135 Overview

Power Field-Effect Transistor

934054610135 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNexperia
package instructionSMALL OUTLINE, R-PDSO-G4
Reach Compliance Codecompliant
Other featuresLOGIC LEVEL COMPATIBLE, ESD PROTECTED
Avalanche Energy Efficiency Rating (Eas)30 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage55 V
Maximum drain current (ID)2.2 A
Maximum drain-source on-resistance0.08 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G4
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)40 A
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1

934054610135 Related Products

934054610135 PHT8N06LT/T3 PHT8N06LT PHT8N06LTT/R
Description Power Field-Effect Transistor Power Field-Effect Transistor Power Field-Effect Transistor Power Field-Effect Transistor
Maker Nexperia Nexperia Nexperia Nexperia
package instruction SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code compliant compliant compliant compliant
Other features LOGIC LEVEL COMPATIBLE, ESD PROTECTED LOGIC LEVEL COMPATIBLE, ESD PROTECTED LOGIC LEVEL COMPATIBLE, ESD PROTECTED LOGIC LEVEL COMPATIBLE, ESD PROTECTED
Avalanche Energy Efficiency Rating (Eas) 30 mJ 30 mJ 30 mJ 30 mJ
Shell connection DRAIN DRAIN DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 55 V 55 V 55 V 55 V
Maximum drain current (ID) 2.2 A 2.2 A 2.2 A 2.2 A
Maximum drain-source on-resistance 0.08 Ω 0.08 Ω 0.08 Ω 0.08 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4
Number of components 1 1 1 1
Number of terminals 4 4 4 4
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 40 A 40 A 40 A 40 A
surface mount YES YES YES YES
Terminal form GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Is it Rohs certified? conform to - conform to conform to
Peak Reflow Temperature (Celsius) NOT SPECIFIED - 260 NOT SPECIFIED
Maximum time at peak reflow temperature NOT SPECIFIED - 30 NOT SPECIFIED
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