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3.0SMCJ12-GT3

Description
Trans Voltage Suppressor Diode, 3000W, 12V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB, LEAD FREE, PLASTIC, SMC, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size286KB,5 Pages
ManufacturerSangdest Microelectronics (Nanjing) Co., Ltd.
Environmental Compliance
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3.0SMCJ12-GT3 Overview

Trans Voltage Suppressor Diode, 3000W, 12V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB, LEAD FREE, PLASTIC, SMC, 2 PIN

3.0SMCJ12-GT3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionR-PDSO-C2
Reach Compliance Codecompliant
Other featuresUL RECOGNIZED
Maximum breakdown voltage16.9 V
Minimum breakdown voltage13.3 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-214AB
JESD-30 codeR-PDSO-C2
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation3000 W
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Certification statusNot Qualified
Maximum repetitive peak reverse voltage12 V
surface mountYES
technologyAVALANCHE
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1

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