DDR DRAM, 32MX16, 0.65ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60
Parameter Name | Attribute value |
Is it Rohs certified? | conform to |
Maker | SAMSUNG |
Parts packaging code | BGA |
package instruction | TFBGA, BGA60,9X12,40/32 |
Contacts | 60 |
Reach Compliance Code | compliant |
ECCN code | EAR99 |
access mode | FOUR BANK PAGE BURST |
Maximum access time | 0.65 ns |
Other features | AUTO/SELF REFRESH |
Maximum clock frequency (fCLK) | 200 MHz |
I/O type | COMMON |
interleaved burst length | 2,4,8 |
JESD-30 code | R-PBGA-B60 |
JESD-609 code | e1 |
length | 12 mm |
memory density | 536870912 bit |
Memory IC Type | DDR DRAM |
memory width | 16 |
Humidity sensitivity level | 2 |
Number of functions | 1 |
Number of ports | 1 |
Number of terminals | 60 |
word count | 33554432 words |
character code | 32000000 |
Operating mode | SYNCHRONOUS |
Maximum operating temperature | 70 °C |
Minimum operating temperature | |
organize | 32MX16 |
Output characteristics | 3-STATE |
Package body material | PLASTIC/EPOXY |
encapsulated code | TFBGA |
Encapsulate equivalent code | BGA60,9X12,40/32 |
Package shape | RECTANGULAR |
Package form | GRID ARRAY, THIN PROFILE, FINE PITCH |
Peak Reflow Temperature (Celsius) | 260 |
power supply | 2.6 V |
Certification status | Not Qualified |
refresh cycle | 8192 |
Maximum seat height | 1.2 mm |
self refresh | YES |
Continuous burst length | 2,4,8 |
Maximum standby current | 0.005 A |
Maximum slew rate | 0.4 mA |
Maximum supply voltage (Vsup) | 2.7 V |
Minimum supply voltage (Vsup) | 2.5 V |
Nominal supply voltage (Vsup) | 2.6 V |
surface mount | YES |
technology | CMOS |
Temperature level | COMMERCIAL |
Terminal surface | Tin/Silver/Copper (Sn/Ag/Cu) |
Terminal form | BALL |
Terminal pitch | 0.8 mm |
Terminal location | BOTTOM |
Maximum time at peak reflow temperature | 40 |
width | 10 mm |
Base Number Matches | 1 |