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K4H511638C-ZLCC0

Description
DDR DRAM, 32MX16, 0.65ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60
Categorystorage    storage   
File Size393KB,24 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Environmental Compliance
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K4H511638C-ZLCC0 Overview

DDR DRAM, 32MX16, 0.65ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60

K4H511638C-ZLCC0 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSAMSUNG
Parts packaging codeBGA
package instructionTFBGA, BGA60,9X12,40/32
Contacts60
Reach Compliance Codecompliant
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time0.65 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)200 MHz
I/O typeCOMMON
interleaved burst length2,4,8
JESD-30 codeR-PBGA-B60
JESD-609 codee1
length12 mm
memory density536870912 bit
Memory IC TypeDDR DRAM
memory width16
Humidity sensitivity level2
Number of functions1
Number of ports1
Number of terminals60
word count33554432 words
character code32000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize32MX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Encapsulate equivalent codeBGA60,9X12,40/32
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)260
power supply2.6 V
Certification statusNot Qualified
refresh cycle8192
Maximum seat height1.2 mm
self refreshYES
Continuous burst length2,4,8
Maximum standby current0.005 A
Maximum slew rate0.4 mA
Maximum supply voltage (Vsup)2.7 V
Minimum supply voltage (Vsup)2.5 V
Nominal supply voltage (Vsup)2.6 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature40
width10 mm
Base Number Matches1

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