M12L2561616A-5TVG2A datasheet, PDF

M12L2561616A-5TVG2A: DescriptionSynchronous DRAM, 16MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54; Categorystorage storage; File Size932KB，46 Pages; ManufacturerESMT; Websitehttp://www.esmt.com.tw/; Elite Semiconductor Memory Technology Inc. (ESMT) is a professional IC design company founded by Dr. Hu Zhao in June 1998. Its headquarters is located in Hsinchu Science Park, Taiwan. The company's main business includes research, development, manufacturing, sales and related technical services of IC products. It was listed on the Taiwan Stock Exchange in March 2002.

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M12L2561616A-5TVG2A Overview

Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54

Parameter Name	Attribute value
package instruction	TSOP2,
Reach Compliance Code	unknown
access mode	FOUR BANK PAGE BURST
Maximum access time	5 ns
Other features	AUTO/SELF REFRESH
JESD-30 code	R-PDSO-G54
length	22.22 mm
memory density	268435456 bit
Memory IC Type	SYNCHRONOUS DRAM
memory width	16
Number of functions	1
Number of ports	1
Number of terminals	54
word count	16777216 words
character code	16000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	16MX16
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP2
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Maximum seat height	1.2 mm
self refresh	YES
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	GULL WING
Terminal pitch	0.8 mm
Terminal location	DUAL
width	10.16 mm
Base Number Matches	1

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