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71V65703S85PFI

Description
ZBT SRAM, 256KX36, 8.5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, MO-136DJ, PLASTIC, TQFP-100
Categorystorage    storage   
File Size512KB,26 Pages
ManufacturerIDT (Integrated Device Technology)
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71V65703S85PFI Overview

ZBT SRAM, 256KX36, 8.5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, MO-136DJ, PLASTIC, TQFP-100

71V65703S85PFI Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerIDT (Integrated Device Technology)
Parts packaging codeQFP
package instruction14 X 20 MM, 1.40 MM HEIGHT, MO-136DJ, PLASTIC, TQFP-100
Contacts100
Reach Compliance Codenot_compliant
ECCN code3A991
Maximum access time8.5 ns
Other featuresFLOW-THROUGH ARCHITECTURE
Maximum clock frequency (fCLK)90 MHz
I/O typeCOMMON
JESD-30 codeR-PQFP-G100
JESD-609 codee0
length20 mm
memory density9437184 bit
Memory IC TypeZBT SRAM
memory width36
Humidity sensitivity level3
Number of functions1
Number of terminals100
word count262144 words
character code256000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize256KX36
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeLQFP
Encapsulate equivalent codeQFP100,.63X.87
Package shapeRECTANGULAR
Package formFLATPACK, LOW PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)240
power supply3.3 V
Certification statusNot Qualified
Maximum seat height1.6 mm
Maximum standby current0.06 A
Minimum standby current3.14 V
Maximum slew rate0.06 mA
Maximum supply voltage (Vsup)3.465 V
Minimum supply voltage (Vsup)3.135 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead (Sn85Pb15)
Terminal formGULL WING
Terminal pitch0.65 mm
Terminal locationQUAD
Maximum time at peak reflow temperature20
width14 mm
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